| AVS 53rd International Symposium | |
| Electronic Materials and Processing | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| EM-ThP2 Effect of the Oxygen Partial Pressure on the Photoluminescence Emission from Heterostructures SiO2/Si/SIO2 Growth by RF Reactive Sputter Magnetron E. Mota-Pineda, M. Melendez-Lira, J. Falconi-Guajardo, Cinvestav-IPN, Mexico, J. Jesus-Araiza, University of Zacatecas, Mexico, W. Calleja-Arriaga, NAOE, Mexico |
| EM-ThP3 Light Emission from SiO@sub x@ Films Deposited on Silicon by Laser Ablation* J.G. Ramirez-Mora, U. Autonoma de Zacatecas, Mexico, M. Melendez-Lira, Fisica, Cinvestav-IPN, Mexico, J.J. Araiza-Ibarra, U. Autonoma de Zacatecas, Mexico, C. Falcony, Fisica, Cinvestav-IPN, Mexico |
| EM-ThP4 UV-Detecting Top-Gate ZnO-TFTs with Polymer Dielectric for Optical Inverter Application K.M. Lee, J.-M. Choi, Yonsei University, Korea, J.H. Park, E. Kim, Hongik University, Korea, C.S. Kim, H.K. Baik, S. Im, Yonsei University, Korea |
| EM-ThP5 Etching Characteristics of ZnO Thin Films using by BCl@sub3@/Ar Inductively Coupled Plasma J.C. Woo, C.M. Kang, J.S. Kim, G.H. Kim, K.T. Kim, C.I. Kim, Chung-Ang University, Korea |
| EM-ThP6 Electroluminescence from ZnO Nanowire/Polymer Composite p-n Junction C.-Y. Chang, F.-C. Tsao, C.-J. Pan, G.-C. Chi, National Central University, Taiwan, H.T. Wang, J.-J. Chen, F. Ren, D.P. Norton, S.J. Pearton, University of Florida, K.-H. Chen, L.-C. Chen, National Taiwan University, Taiwan |
| EM-ThP7 Reliability of Gate Dielectrics for ZnO Thin-Film Transistors Operating at Low Voltages M.S. Oh, K.M. Lee, K.H. Choi, S. Im, Yonsei University, Korea |
| EM-ThP8 Metal Oxide Gas Microsensors for Sensing & Recognition of Low Concentrations of Hazardous Chemicals J.K. Evju, B. Raman, National Institute of Standards and Technology, Z. Boger, OPTIMAL - Industrial Neural Systems, Israel, D.C. Meier, K.D. Benkstein, C.B. Montgomery, S. Semancik, National Institute of Standards and Technology |
| EM-ThP9 Micro-Optical Switch Device Based on Semiconductor-To-Metallic Phase Transition Characteristics of W-doped VO@sub 2@ Smart Coatings M. Soltani, M. Chaker, INRS-Energie, Matériaux et Télécommunications, Canada, E. Haddad, R.V. Kruzelecky, MPB Communications Inc., J. Margot, Université de Montréal, Canada |
| EM-ThP10 Characteristics of Ohmic Contact Properties on N-polar Face n-type GaN with Dry and Wet Etching Method T. Jang, Y.J. Sung, O.H. Nam, Y. Park, Samsung Advanced Institute of Technology, Korea |
| EM-ThP12 The Structural and Optical Properties of InN Layers Grown by High Pressure CVD M. Alevli, G. Durkaya, Georgia State University, W. Fenwick, Georgia Institute of Technology, A. Weerasekara, V.T. Woods, Georgia State University, I. Ferguson, Georgia Institude of Technology, U. Perera, N. Dietz, Georgia State University |
| EM-ThP13 Reliability Performance and Electrical Comparison of TiB@sub 2@ ,CrB@sub 2@ and W@sub 2@B@sub 5@ Based Ohmic Contacts on n-GaN R Khanna, S.J. Pearton, F. Ren, I.I. Kravchenko, University of Florida |
| EM-ThP14 Decay Mechanism of Negative Electron Affinity (Cs/O Activated)InP(100) Photocathodes D.-I. Lee, Stanford University, Y. Sun, Z. Liu, Stanford Synchrotron Radiation Laboratory, S. Sun, Stanford University, P. Pianetta, Stanford Synchrotron Radiation Laboratory |
| EM-ThP15 Electronic Properties of Adsorbates on GaAs(001)-c(2x8)/(2x4) D.L. Winn, M.J. Hale, A.C. Kummel, University of California, San Diego |
| EM-ThP16 Bonding Geometries of In@sub 2@O on InAs(001)-(4x2) J. Shen, D.L. Winn, N.M. Santagata, A.C. Kummel, University of California, San Diego |
| EM-ThP17 High Thermal Stability Ag-based Ohmic Contacts for InAlAs/InGaAs/InP High Electron Mobility Transistors L. Wang, W.F. Zhao, I. Adesida, University of Illinois at Urbana-Champaign |
| EM-ThP18 Ion-channeling Damage Profiles in Ferromagnetic Mn-implanted Si C. Awo-Affouda, M.B. Huang, V.P. LaBella, University at Albany-SUNY |
| EM-ThP19 Ferroelectric Properties of Na@sub 0.5@ K@sub 0.5@ NbO@sub 3@ Thin Films for Nonvolatile Ferroelectric Random Access Memory K.T. Kim, C.I. Kim, Chung-Ang University, Korea |
| EM-ThP20 Fatigue Characteristics of PZT Thin Film Capacitors with Controls of CMP Process Parameters and Slurry Contaminations Y.-K. Jun, N.H. Kim, W.-S. Lee, Chosun University, Korea |
| EM-ThP21 Molecular Beam Epitaxy of YMnO@sub 3@ on c-plane GaN C.B. Keenan, T. Liu, K. Lee, R.P. Tompkins, E.D. Schires, Y. Chye, D. Lederman, T.H. Myers, West Virginia University |
| EM-ThP22 Integration of Barium Ferrite on the Wide Bandgap Semiconductor 6H-SiC Through Molecular Beam Epitaxy Z. Cai, Z Chen, T.L. Goodrich, V.G. Harris, K.S. Ziemer, Northeastern University |
| EM-ThP23 Ferroelectric and Dielectric Properties of BLT Capacitors Fabricated by Damascene Process using Chemical Mechanical Polishing S.H. Shin, P.J. Ko, N.H. Kim, W.-S. Lee, Chosun University, Korea |
| EM-ThP24 P Incorporation during Si(001):P Gas-Source Molecular Beam Epitaxy: Effects on Growth Kinetics and Surface Morphology B. Cho, J. Bareno, University of Illinois at Urbana-Champaign, Y.L. Foo, Institute of Materials Research and Engineering, Singapore, S. Hong, Seoul National University, Korea, T. Spila, I. Petrov, J.E. Greene, University of Illinois at Urbana-Champaign |
| EM-ThP25 Solid Source Phosphorous Doping in Si G.G. Jernigan, P.E. Thompson, U.S. Naval Research Laboratory |
| EM-ThP28 Local Structure Around Germanium Atoms in SiGe Thin Films Y. Uehara, K. Kawase, Mitsubishi Electric Co., Japan, J. Tsuchimoto, Renesas Co., Japan |
| EM-ThP29 Inspection and Analysis of Voiding Defects in Copper Interconnects on a Test Wafer S. Suzuki, Y. Nakano, K. Umemura, T. Sato, Hitachi High-Technologies Corporation, Japan |
| EM-ThP30 Oxidation of Thin Y-Si Film on Silicon S.Y. Chiam, Imperial College, United Kingdom, W.K. Chim, National University of Singapore, A.C. Huan, Nanyang Technological University, Singapore, J. Zhang, Imperial College, UK, J.S. Pan, Institute of Materials Research & Engineering, Singapore |
| EM-ThP31 Effects of NO Addition on Chemical Dry Etching of Silicon Oxide Layers in F2/Ar and F2/Ar/N2 Remote Plasma Processing N.-E. Lee, Y.B. Yun, D. Kim, Sungkyunkwan University, Korea, Y.-C. Jang, G. Bae, Atto Inc in Korea |
| EM-ThP32 Yield improvement of 0.13 µm Cu/Low-k Dual Damascene Interconnection by Organic Cleaning Process H.K. Lee, Chung-Ang University, Korea, N.H. Kim, Chosun University, Korea, S.Y. Kim, DongbuAnam Semiconductor Inc., Korea, C.I. Kim, E.G. Chang, Chung-Ang University, Korea |
| EM-ThP33 Etch Induced Sidewall Damage Evaluation in Porous Low-k MSQ Films N.-E. Lee, B. Kong, Sungkyunkwan University, Korea, T. Choi, S. Sirard, Lam Research Corporation, D. Kim, Sungkyunkwan University, Korea |
| EM-ThP34 Arsenic Ultra Shallow Junction Deactivation Investigated by Multi-Technique Analytical Approach M. Bersani, G. Pepponi, D. Giubertoni, S. Gennaro, M. Anderle, ITC-irst, Italy, R. Doherty, M.A. Foad, Applied Materials |
| EM-ThP37 Effects of Additive C@sub 4@F@sub 8@ on Dry Etching of TaN/HfO@sub 2@ Gate Stack Structure using Inductively Coupled BCl@sub 3@/Ar Plasma J.H. Ko, M.S. Park, D.-Y. Kim, Sungkyunkwan University, Korea, S.S. Lee, J. Ahn, Hanyang University, Korea, N.-E. Lee, Sungkyunkwan University, Korea |
| EM-ThP38 Characteristics of the Laminated HfO@sub2@/Al@sub2@O@sub3@ High-k Gate Oxides for Thin Film Transistors S.W. Jeong, K.-S. Kim, J.-Y. Son, Y. Roh, Sungkyunkwan University, Korea |
| EM-ThP39 High-k Dielectric Lanthanum Oxide Thin Films Deposited by Spray Pyrolysis S. Carmona, G. Alarcon, CICATA-IPN, Mexico, J. Guzman-Mendoza, M. Garcia-Hipolito, IIM-UNAM, Mexico, M. Aguilar, CICATA-IPN, Mexico, C. Falcony, CINVESTAV-IPN, Mexico |
| EM-ThP40 Suppression of Chemical Phase Separation in Hf and Ti Si Oxynitride Alloys with High Silicon Nitride Content S. Lee, G. Lucovsky, NC State University, J. Luning, Stanford Synchrotron Radiation Lab |
| EM-ThP41 Room-Temperature Magnetron-Sputtered High-k Titanium Silicate Thin Films for MIM and MOS Device Applications D. Brassard, INRS-Énergie, Matériaux et Télécommunications, Canada, L. Ouellet, DALSA Semiconductor, Canada, M.A. El Khakani, INRS-Énergie, Matériaux et Télécommunications, Canada |
| EM-ThP42 A Study of High-k Removal by Plasma Etching and its Effect on Gate Dielectric Characterization B.S. Ju, S.C. Song, J. Barnett, SEMATECH, B.H. Lee, IBM |
| EM-ThP43 Scanning Probe Microscopy Study of Atomic Layer Deposited Hafnium Based High-k Dielectric Films X.-D. Wang, D.H. Triyoso, R.I. Hegde, D. Roan, R. Gregory, Freescale Semiconductor, Inc. |
| EM-ThP44 Dependence of the Nitrogen Depth Profile on Annealing In HfSiON/SiON/Si(001) Ultrathin Films A. Herrera-Gomez, University of Texas at Dallas and CINVESTAV-Queretaro, Mexico, F.S. Aguirre-Tostado, G. Pant, University of Texas at Dallas, M.A. Quevedo-Lopez, P.D. Kirsch, SEMATECH, B.E. Gnade, R.M. Wallace, University of Texas at Dallas |
| EM-ThP45 Electrical and Chemical Analyses of SrTiO@sub 3@/Y@sub 2@O@sub 3@ MIM Capacitors C. Vallee, M. Kahn, E. Defay, C. Dubourdieu, M. Bonvalot, O. Joubert, LTM/CNRS, France |
| EM-ThP46 Nitrogen Incorporation in Hf-based High-k Dielectrics Upon Thermal and Plasma Treatments F.S. Aguirre-Tostado, University of Texas at Dallas, A. Herrera-Gomez, University of Texas at Dallas and Cinvestav-Qro, Mexico, M.J. Kim, B.E. Gnade, R.M. Wallace, University of Texas at Dallas, M.A. Quevedo-Lopez, Texas Instruments assignee at SEMATECH, P.D. Kirsch, IBM assignee at SEMATECH |
| EM-ThP47 Cyclic Chemical Vapor Deposition of TiAlO Ultra-Thin Films X. Song, C.G. Takoudis, University of Illinois at Chicago |
| EM-ThP48 Preparation of Yttrium and Aluminum Oxide Thin Films through Supercritical Carbon Dioxide Assisted Deposition Z. Chen, T. Gougousi, UMBC |
| EM-ThP49 Influence of the Bottom Electrode Material in Y@sub 2@O@sub 3@ MIM Capacitors M. Bonvalot, M. Kahn, C. Vallee, J. Ducote, O. Joubert, LTM/CNRS, France |
| EM-ThP50 Synthesis and Dielectric Characteristics of Poly Paraxylene-C Thin Films P. Tewari, M.T. Lanagan, G. Sethi, Pennsylvania State University |
| EM-ThP51 Chemical Structure of the Bilayer Ag/Li@sub 2@O Cathode Interface in Organic Light-Emitting Diodes M.H. Joo, M.K. Baik, J.K. Choi, LG Electronics Institute of Technology, South Korea |
| EM-ThP52 Thickness Dependence of High Capacitance-Gate Dielectric Layer on Electrical, Structural Characteristics and OTFT Device Performance C.S. Kim, H.K. Baik, Yonsei University, South Korea |
| EM-ThP53 Luminescence Properties of Organic Light Emitting Diodes using Chemical Mechanical Polishing Process G.-W. Choi, W.-S. Lee, Chosun University, Korea, Y.J. Seo, Daebul University, Korea, P.-G. Jung, Chosun University, Korea |
| EM-ThP54 Electrical Properties of Organic Light Emitting Diodes by Indium Tin Oxide-Chemical Mechanical Polishing Process G.-W. Choi, W.-S. Lee, Chosun University, Korea, Y.J. Seo, Daebul University, Korea, Y.-K. Jun, Chosun University, Korea |
| EM-ThP55 Strongly Enhanced Thermal Stability of Crystalline Organic Thin Films Induced by Aluminum Oxide Capping Layers S. Sellner, A. Gerlach, F. Schreiber, Universit@um a@t T@um u@bingen, Germany, M. Kelsch, N. Kasper, H. Dosch, Max-Planck-Institut f@um u@r Metallforschung, Germany, S. Meyer, J. Pflaum, M. Fischer, B. Gompf, Universit@um a@t Stuttgart, Germany |
| EM-ThP57 Sol-Gel Derived SiO2-TiO2 Dielectric Layer for Organic Thin Film Transistor S.W. Lee, H.K. Baik, Yonsei University, South Korea |
| EM-ThP58 Plasma Treatment Effects on the Device Performance of Organic Thin Film Transistors S.J. Jo, C.S. Kim, S.W. Lee, H.K. Baik, Yonsei University, Korea |
| EM-ThP59 Synthesis, Characterization, and Properties of Flexible Side-Chain-Containing Polyimides C.-L. Cheng, Chung-Yuan University, Taiwan, L. Wang, National Taiwan University |
| EM-ThP61 Jet-printed Organic Electronics: Display Backplanes without Vacuum Processing J.H. Daniel, A.C. Arias, B. Krusor, R.A. Street, Palo Alto Research Center |
| EM-ThP62 An Improved Method for the Derivation of Depth Profile Information from Angle Resolved XPS Data P. Mack, R.G. White, Thermo Electron Corporation, UK, T. Conard, IMEC, Belgium |
| EM-ThP63 An Investigation of Thermal Management in Laser Diode Structures D. Roberts, G. Triplett, University of Missouri-Columbia |