AVS 53rd International Symposium
    Electronic Materials and Processing Thursday Sessions
       Session EM-ThP

Paper EM-ThP2
Effect of the Oxygen Partial Pressure on the Photoluminescence Emission from Heterostructures SiO2/Si/SIO2 Growth by RF Reactive Sputter Magnetron

Thursday, November 16, 2006, 5:30 pm, Room 3rd Floor Lobby

Session: Electronic Materials and Processing Poster Session
Presenter: E. Mota-Pineda, Cinvestav-IPN, Mexico
Authors: E. Mota-Pineda, Cinvestav-IPN, Mexico
M. Melendez-Lira, Cinvestav-IPN, Mexico
J. Falconi-Guajardo, Cinvestav-IPN, Mexico
J. Jesus-Araiza, University of Zacatecas, Mexico
W. Calleja-Arriaga, NAOE, Mexico
Correspondent: Click to Email
We prepared heteroestructures SiO2/Si/SiO2 by sputter reactive magnetron deposition on Si (100) and corning glass substrates at 400°C. We employed a polycrystalline Si target with Ar and O2 as working gases. We investigate the effect of the partial pressure of oxygen and the thickness of the Si interlayer on the electronic properties of the heterostructure. Crystallographic properties were studied by X-ray diffraction and chemical composition was determinate by EDX. The electronic properties were determined by transmission and Raman spectroscopies at room temperature. The Raman spectrum of the as-deposited samples has two broad features due to scattering by TO and LA phonons in a-Si respectively. UV-Vis transmission spectroscopy shows that the absorption edge shifts as function of the thickness of Si interlayer. The FTIR absorption spectra of as-deposited films show absorption peaks associated with vibration modes of the SiO2 and Si-Si. The thicknesses of the films were determinate by scanning electron microscopy and vary between 500 and 600nm. We observed the superficial topography of the material through AFM. Transmission electron-microscope micrography confirms the growth of the SiO2/Si/SiO2 heterostructure and the electron diffraction pattern shows the presence of nanocrystalline phases. A broad lumininescent band (around 1.7 eV) appears by effect of the Si interlayer and its intensity increases with the Si layer thickness. The results are discussed in terms of a model of quantum confinement of Si embedded in a SiO2 matrix. The effect of rapid thermal annealing under Ar and O2 atmospheres on the photoluminescent characteristics are also discussed.