AVS 53rd International Symposium
    Electronic Materials and Processing Thursday Sessions
       Session EM-ThP

Paper EM-ThP18
Ion-channeling Damage Profiles in Ferromagnetic Mn-implanted Si

Thursday, November 16, 2006, 5:30 pm, Room 3rd Floor Lobby

Session: Electronic Materials and Processing Poster Session
Presenter: C. Awo-Affouda, University at Albany-SUNY
Authors: C. Awo-Affouda, University at Albany-SUNY
M.B. Huang, University at Albany-SUNY
V.P. LaBella, University at Albany-SUNY
Correspondent: Click to Email
Semiconductor devices which exploit the spin of the electron have potential to produce devices with increased functionalities. Making conventional semiconductors such as GaAs and Si ferromagnetic via doping with Mn will aid in fabricating these future spintronic devices. It has been suggested that the residual implant damage after post implant annealing plays a role in the magnetic behavior of Mn-implanted Si. To further investigate this, lattice disorder depth profiles were obtained from RBS-channeling experiments on Mn implanted p-type Si samples. These profiles reveal a strong influence of the Mn fluence and the post implant annealing temperatures upon the defects generated from implantation. Specifically, above 800C, the back scattering yield from Si lattice defects decreases which is coincident with a decrease in the magnetization. Modeling is also performed to help understand the type of defects and their distributions.