AVS 53rd International Symposium
    Electronic Materials and Processing Thursday Sessions
       Session EM-ThP

Paper EM-ThP58
Plasma Treatment Effects on the Device Performance of Organic Thin Film Transistors

Thursday, November 16, 2006, 5:30 pm, Room 3rd Floor Lobby

Session: Electronic Materials and Processing Poster Session
Presenter: S.J. Jo, Yonsei University, Korea
Authors: S.J. Jo, Yonsei University, Korea
C.S. Kim, Yonsei University, Korea
S.W. Lee, Yonsei University, Korea
H.K. Baik, Yonsei University, Korea
Correspondent: Click to Email
We investigated electronic effects of plasma treatment on device properties of pentacene based thin film transistors (TFTs) with ITO (indium-tin-oxide) source and drain electrodes. The treated ITO electrodes were investigated by both contact angle measurements and X-ray photoelectron spectroscopy (XPS). The TFTs with plasma treated ITO electrodes show significantly improved performance over the devices without plasma treated ITO. The plasma treatment of the ITO surface improved the TFT performance by enhancing the hole injections from the electrode. The change in performance was attributed to the removal of contaminants and to the change in work function of ITO.