AVS 53rd International Symposium
    Electronic Materials and Processing Thursday Sessions
       Session EM-ThP

Paper EM-ThP62
An Improved Method for the Derivation of Depth Profile Information from Angle Resolved XPS Data

Thursday, November 16, 2006, 5:30 pm, Room 3rd Floor Lobby

Session: Electronic Materials and Processing Poster Session
Presenter: P. Mack, Thermo Electron Corporation, UK
Authors: P. Mack, Thermo Electron Corporation, UK
R.G. White, Thermo Electron Corporation, UK
T. Conard, IMEC, Belgium
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The construction of depth profiles from angle resolved XPS (ARXPS) data is currently receiving much attention. This is mainly due to the increasing technological importance of layers whose thickness is of the order of a few nanometres. Transistor gate dielectric layers and self-assembled monolayers are good examples of such layers. The construction of profiles from ARXPS data can be accomplished using methods involving maximum entropy but there are limits to the accuracy and repeatability of these methods if used in isolation. In this paper, we will show that the quality of the profiles can be improved by making use of additional, readily available, information. For example, the composition of the substrate is usually known as is the oxidation state of the elements in the thin film because these are available from the XPS spectrum. This information can be used to refine the profiles derived using maximum entropy thus improving the reliability of the result. The method will be described in detail and illustrated by reference to layers of nitrided hafnium oxide on silicon. The nitrogen profiles obtained using this method will be compared with those derived from other experimental techniques.