AVS 53rd International Symposium
    Electronic Materials and Processing Thursday Sessions
       Session EM-ThP

Paper EM-ThP19
Ferroelectric Properties of Na@sub 0.5@ K@sub 0.5@ NbO@sub 3@ Thin Films for Nonvolatile Ferroelectric Random Access Memory

Thursday, November 16, 2006, 5:30 pm, Room 3rd Floor Lobby

Session: Electronic Materials and Processing Poster Session
Presenter: K.T. Kim, Chung-Ang University, Korea
Authors: K.T. Kim, Chung-Ang University, Korea
C.I. Kim, Chung-Ang University, Korea
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The ferroelectric sodium-potassium niobate Na@sub 0.5@ K@sub 0.5@ NbO@sub 3@ (hereafter NKN, a solid solution of KNbO@sub 3@ and NaNbO@sub 3@) thin films have received the intent attention for their excellent ferroelectric, crystalline properties and lead-free materials. It was shown that NKN thin films are able to overcome the drawbacks of other materials, such as SBT and PZT, for nonvolatile memory applications. The NKN thin films were prepared by using metal organic decomposition method. The structure and morphology of the films were analyzed by x-ray diffraction (XRD), atomic force microscope (AFM), and Scanning electron micrograph (SEM). SEM and AFM showed uniform surface of the films. From the XRD analysis, the NKN thin films were grown using a Pt bottom electrode showed a polycrystalline phase. The remanent polarization Pr and coercive field is 13.5 µmC/cm@super 2@ and 89 kV/cm. The BLT thin films on Pt bottom electrode exhibited no significant degradation of switching charge at least up to 5 x 10@super 9@ switching cycles at a frequency of 50 kHz below cycling fields of 5 V.