AVS 53rd International Symposium
    Electronic Materials and Processing Thursday Sessions
       Session EM-ThP

Paper EM-ThP20
Fatigue Characteristics of PZT Thin Film Capacitors with Controls of CMP Process Parameters and Slurry Contaminations

Thursday, November 16, 2006, 5:30 pm, Room 3rd Floor Lobby

Session: Electronic Materials and Processing Poster Session
Presenter: Y.-K. Jun, Chosun University, Korea
Authors: Y.-K. Jun, Chosun University, Korea
N.H. Kim, Chosun University, Korea
W.-S. Lee, Chosun University, Korea
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Pb(Zr,Ti)O@sub 3@ (PZT) is very attractive ferroelectric materials for ferroelectric random access memory (FeRAM) applications because of its high polarization ability and low process temperature. In this study, PZT thin film capacitors were fabricated by damascene process instead of plasma etching process. Damascene process of PZT thin film was first applied for the densification of devices and the protection of plasma damages including ion charging. However, chemical mechanical polishing (CMP) pressure and velocity must be carefully adjusted because FeRAM shrinks to high density devices. The probability of CMP damage such as microscratch surely existed although the removal rate of PZT thin films increases and the yield improves through the each increase of CMP pressure and velocity. The contaminations such as slurry residues due to the absence of the exclusive cleaning chemicals are enough to influence on the degradation of PZT thin film capacitors. The fatigue characteristics of the degradations of PZT thin film capacitors were investigated by the change of process parameters and the cleaning process. Both the low CMP pressure and the cleaning process must be employed, even if the removal rate and the yield were decreased, to reduce the fatigue of PZT thin film capacitors fabricated by damascene process. Like this, fatigue characteristics were partially controlled by the regulation of the CMP process parameters in PZT damascene process. And the exclusive cleaning chemicals for PZT thin films were developed in this work. Acknowledgement: This work was supported by Korea Research Foundation Grant (KRF-2004-005-D00007).