AVS 53rd International Symposium
    Electronic Materials and Processing Thursday Sessions
       Session EM-ThP

Paper EM-ThP39
High-k Dielectric Lanthanum Oxide Thin Films Deposited by Spray Pyrolysis

Thursday, November 16, 2006, 5:30 pm, Room 3rd Floor Lobby

Session: Electronic Materials and Processing Poster Session
Presenter: C. Falcony, CINVESTAV-IPN, Mexico
Authors: S. Carmona, CICATA-IPN, Mexico
G. Alarcon, CICATA-IPN, Mexico
J. Guzman-Mendoza, IIM-UNAM, Mexico
M. Garcia-Hipolito, IIM-UNAM, Mexico
M. Aguilar, CICATA-IPN, Mexico
C. Falcony, CINVESTAV-IPN, Mexico
Correspondent: Click to Email
Lanthanum oxide thin films were deposited on silicon substrates using the spray pyrolysis technique. Several chemical solution concentrations of lanthanum acetylacetonate dissolved in acetylacetone were prepared to obtain the films at substrate temperatures in the range of 450-550 ºC. The total thickness of the deposited layers was of the order of 50 Ã.. At low temperatures the films resulted amorphous. In addition, the films were characterized by Ellipsometry (single wavelength and spectroscopic), Infrared Spectroscopy, Atomic Force Microscopy, and Electron Microscopy. The chemical composition was studied by Energy Dispersive Spectroscopy, and by means of nuclear reactions. The electrical behavior of the films (I-V and C-V), is discussed when they are incorporated in Metal-Oxide-Semiconductor structures. The growth of an interfacial layer of silicon oxide in the films was controlled by means of the addition of a water/ammonium hydroxide mist applied during the deposition process.