AVS 53rd International Symposium
    Electronic Materials and Processing Thursday Sessions
       Session EM-ThP

Paper EM-ThP31
Effects of NO Addition on Chemical Dry Etching of Silicon Oxide Layers in F2/Ar and F2/Ar/N2 Remote Plasma Processing

Thursday, November 16, 2006, 5:30 pm, Room 3rd Floor Lobby

Session: Electronic Materials and Processing Poster Session
Presenter: Y.B. Yun, Sungkyunkwan University, Korea
Authors: N.-E. Lee, Sungkyunkwan University, Korea
Y.B. Yun, Sungkyunkwan University, Korea
D. Kim, Sungkyunkwan University, Korea
Y.-C. Jang, Atto Inc in Korea
G. Bae, Atto Inc in Korea
Correspondent: Click to Email
Chemical dry etching and cleaning process of silicon oxide layers in Si device manufacturing fabs have been carried out using PFCs. Etching process utilizing F@sub 2@gas is of a great interest. We carried out etching experiments using F@sub 2@/Ar, F@sub 2@/Ar/N@sub 2@ remote plasma generated from a toroidal-type remote plasma source in a commercial PECVD system. And the effect of directly-injected NO gas on the SiO@sub 2@ etching in F@sub 2@/Ar/N@sub 2@ remote plasmas was investigated. Etching experiments were carried out by varying the gas flow ratio, flow rate, RF power, and temperature. The effects of NO addition to F@sub 2@/Ar, F@sub 2@/Ar/N@sub 2@ etching were characterized by measuring the etch rates and by analyzing the emitted species during etching. The results showed that the addition of NO gas increased the etch rates significantly. The mechanism for etch rate enhancement will be discussed in detail in conjunction with the gas emission analysis using FT-IR and RGA and chemical composition of the etched oxide surface using XPS.