AVS 53rd International Symposium
    Electronic Materials and Processing Thursday Sessions
       Session EM-ThP

Paper EM-ThP55
Strongly Enhanced Thermal Stability of Crystalline Organic Thin Films Induced by Aluminum Oxide Capping Layers

Thursday, November 16, 2006, 5:30 pm, Room 3rd Floor Lobby

Session: Electronic Materials and Processing Poster Session
Presenter: S. Sellner, Universit@um a@t T@um u@bingen, Germany
Authors: S. Sellner, Universit@um a@t T@um u@bingen, Germany
A. Gerlach, Universit@um a@t T@um u@bingen, Germany
F. Schreiber, Universit@um a@t T@um u@bingen, Germany
M. Kelsch, Max-Planck-Institut f@um u@r Metallforschung, Germany
N. Kasper, Max-Planck-Institut f@um u@r Metallforschung, Germany
H. Dosch, Max-Planck-Institut f@um u@r Metallforschung, Germany
S. Meyer, Universit@um a@t Stuttgart, Germany
J. Pflaum, Universit@um a@t Stuttgart, Germany
M. Fischer, Universit@um a@t Stuttgart, Germany
B. Gompf, Universit@um a@t Stuttgart, Germany
Correspondent: Click to Email

We present a detailed study of the strongly enhanced thermal stability of organic thin films of diindenoperylene encapsulated by sputtered aluminum oxide layers. We study the influence of capping layer thickness, stoichiometry, and heating rate on the thermal stability of capped films and their eventual breakdown. Under optimized encapsulation conditions (thick and stoichiometric capping layer), the organic films desorb only at temperatures 200 °C above the desorption of the uncapped film. Moreover, the capped organic films retain their crystalline order at these elevated temperatures, whereas they would normally (i.e., uncapped) be in the gas phase. This study therefore also shows a way of studying organic materials under temperature conditions normally inaccessible. Considering results from complementary techniques, we discuss possible scenarios for the eventual breakdown. The results have implications for the performance and long-term stability of organic devices for which stability against elevated temperatures as well as against exposure to ambient gases is crucial. @FootnoteText@ S. Sellner et al., J. Mater. Res. 21 (2006) 455. S. Sellner et al., Adv. Mater. 16 (2004) 1750.