AVS 53rd International Symposium
    Electronic Materials and Processing Thursday Sessions
       Session EM-ThP

Paper EM-ThP34
Arsenic Ultra Shallow Junction Deactivation Investigated by Multi-Technique Analytical Approach

Thursday, November 16, 2006, 5:30 pm, Room 3rd Floor Lobby

Session: Electronic Materials and Processing Poster Session
Presenter: M. Bersani, ITC-irst, Italy
Authors: M. Bersani, ITC-irst, Italy
G. Pepponi, ITC-irst, Italy
D. Giubertoni, ITC-irst, Italy
S. Gennaro, ITC-irst, Italy
M. Anderle, ITC-irst, Italy
R. Doherty, Applied Materials
M.A. Foad, Applied Materials
Correspondent: Click to Email
New processes are needed to satisfy the requirements of modern ULSI C-MOS fabrication. In particular for source and drain extension laser sub-melt annealing has arisen as an emerging tool able to produce high level of dopant activation together with ultra shallow distribution. Nevertheless arsenic (the most used n-type dopant) is known to easily deactivate when further thermal annealings are carried out after laser treatment. A detailed study is required in order to understand its behavior in high concentration regime and in close proximity of the surface as in the case of ultra shallow distribution. In this work ultra shallow arsenic implants (2 keV implant energy, dose ranging from 3E13 to 3E15 at/cm2) laser sub-melt annealed have been submitted to further thermal processes in conventional furnace. The samples so produced have been characterized by a multi-technique analytical approach: Secondary Ion Mass Spectrometry (SIMS), Hall Effect measurements, Extended X-ray Absorption Fine Structure (EXAFS). This approach has been chosen to enable the correlation among dopant electrical activation, spatial distribution and the local order structure around arsenic atoms. Results show how Arsenic diffusion and electrical behavior after post laser treatment depend on laser annealing conditions.