AVS 53rd International Symposium
    Electronic Materials and Processing Thursday Sessions
       Session EM-ThP

Paper EM-ThP57
Sol-Gel Derived SiO2-TiO2 Dielectric Layer for Organic Thin Film Transistor

Thursday, November 16, 2006, 5:30 pm, Room 3rd Floor Lobby

Session: Electronic Materials and Processing Poster Session
Presenter: S.W. Lee, Yonsei University, South Korea
Authors: S.W. Lee, Yonsei University, South Korea
H.K. Baik, Yonsei University, South Korea
Correspondent: Click to Email
Solution processible gate dielectric using SiO2-TiO2 composite oxide were prepared by sol-gel method for OTFT application. The composition, crystal structure, bonding configuration and electrical properties of SiO2-TiO2 composite oxide were analyzed using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR) and current-voltage (I-V) measurement. Si/Ti ratio was 1:1 and annealing temperature was 300^C. Dielectric constant around 8 was obtained by capacitance-voltage measurement. The modification of microstructure and chemical bonding configuration in the SiO2-TiO2 film by the annealing temperature and its influence on electrical properties are discussed. We have fabricated OTFT device using SiO2-TiO2 composite oxide as a dielectric layer. Electrical properties of OTFT show that solution processible dielectric layer produce almost same results as vacuum process. We expect this process can replace conventional vacuum process due to its simplicity and low price consumption.