AVS 53rd International Symposium
    Electronic Materials and Processing Thursday Sessions
       Session EM-ThP

Paper EM-ThP3
Light Emission from SiO@sub x@ Films Deposited on Silicon by Laser Ablation*

Thursday, November 16, 2006, 5:30 pm, Room 3rd Floor Lobby

Session: Electronic Materials and Processing Poster Session
Presenter: M. Melendez-Lira, Fisica, Cinvestav-IPN, Mexico
Authors: J.G. Ramirez-Mora, U. Autonoma de Zacatecas, Mexico
M. Melendez-Lira, Fisica, Cinvestav-IPN, Mexico
J.J. Araiza-Ibarra, U. Autonoma de Zacatecas, Mexico
C. Falcony, Fisica, Cinvestav-IPN, Mexico
Correspondent: Click to Email
We have produced SiO@sub x@ films by laser ablation employing a silicon target under a O@sub 2@ atmosphere. Films were prepared employing the 1064 nm and 532 nm wavelength obtained from a Nd:Yag pulsed laser. Power intensity applied to the target was modulated by focusing the laser beam. Film thickness was controlled by the number of pulses applied on the silicon target. Chemical composition obtained by EDX shows that films produced present an excess of silicon. This was corroborated from results of the refraction index value obtained by ellipsometry measurements. Raman spectroscopy results show the presence of amorphous silicon regions. Room temperature photoluminescence measurements were carried out with 632.8 nm and 457.9 nm wavelengths from a HeNe and Ar@super +@ lasers. A broad emission was detected under the HeNe excitation, a stronger intensity was obtained from the thinner films. For thicker films narrow peaks are developed on the broad emission. When luminescence is excited with the Ar@super +@ laser a narrow peak around 580 nm is observed. Surface topography obtained by AFM shows the presence of square columm-like features. We will present transmission electron micrographies. Results are discuss in terms of the presence of silicon clusters embedded within a SiO@sub 2@ matrix. @FootnoteText@ *work partially funded by CONACyT-Mexico.