AVS 53rd International Symposium
    Electronic Materials and Processing Thursday Sessions
       Session EM-ThP

Paper EM-ThP48
Preparation of Yttrium and Aluminum Oxide Thin Films through Supercritical Carbon Dioxide Assisted Deposition

Thursday, November 16, 2006, 5:30 pm, Room 3rd Floor Lobby

Session: Electronic Materials and Processing Poster Session
Presenter: Z. Chen, UMBC
Authors: Z. Chen, UMBC
T. Gougousi, UMBC
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Aluminum and yttrium oxide thin films were deposited on silicon at low temperatures (<150°C) through a chemical route, where the metal-organic precursors and oxidizing agents were delivered in liquid and supercritical carbon dioxide. Aluminum acetylacetonate (99%) (Al(acac)@sub3@), aluminum hexafluoroacetyl-acetonate (min. 98%) (Al(hfac)@sub3@), and tris(2,2,6,6-tetramethyl-3,5-heptanedionato) yttrium(III), (98+%, 99.9%-Y) (Y(tmhd)@sub3@) were used as precursors and a 30% aqueous solution of hydrogen peroxide, tert-butyl peroxide, and di-tert-amyl peroxide as oxidants. Depositions were carried out in a hot wall reactor at pressures ranging from 2100 to 3500 psi at 70-140°C. The deposited thin films were investigated by using X-ray photoelectron spectroscopy (XPS) and transmission Fourier transform infrared spectroscopy (FTIR). XPS and FTIR results indicated the formation of metal oxides thin films with some bonded carbon present in the film. Substitution of the aqueous hydrogen peroxide solution by the organic peroxides resulted in substantially lower OH and carbonate content in the films. For Al@sub2@O@sub3@ deposition from Al(acac)@sub3@ and tert butyl peroxide a very narrow temperature window (110 -120°C) existed for film formation. However, for Y@sub2@O@sub3@ deposition from Y(tmhd)@sub3@ and the same oxidant we find a much broader deposition window ranging from 80 to 130°C. The results demonstrate the feasibility of the technique for the deposition of metal oxide films.