AVS 53rd International Symposium
    Electronic Materials and Processing Thursday Sessions
       Session EM-ThP

Paper EM-ThP50
Synthesis and Dielectric Characteristics of Poly Paraxylene-C Thin Films

Thursday, November 16, 2006, 5:30 pm, Room 3rd Floor Lobby

Session: Electronic Materials and Processing Poster Session
Presenter: G. Sethi, Pennsylvania State University
Authors: P. Tewari, Pennsylvania State University
M.T. Lanagan, Pennsylvania State University
G. Sethi, Pennsylvania State University
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Poly paraxylene-C thin films are particularly useful in both biomedical and electronic applications. In the current work the synthesis and electrical properties of Poly paraxylene-C (parylene-C) thin films were investigated. Parylene-C has high breakdown strength and dielectric constant of 2.8. Parylene-C thin film were deposited by pyrolitic vapor decomposition of substituted paraxylene, followed by its polymerization on metallic substrates. During the deposition, base pressure was maintained at 21mtorr while evaporator and pyrolysis furnaces were maintained at 160°C and 690°C respectively. Crystallinity of Paralyne-C thin films was analyzed with the variation of pressure in deposition chamber. Reduction in chamber pressure has shown to improve film morphology. Dielectric constant and dissipation factor variation with temperature and frequency were analyzed with LCR meter and impedance gain phase analyzer. 1µm thick parylene thin film were shown to have a dielectric constant of 3.1 at frequency of 1MHz and room temperature. A dielectric relaxation following Maxwell- Wagner behavior was noticed around 20KHz frequency. Current-voltage characteristic was analyzed to distinguish between regions of Ohmic and non-Ohmic conduction. Deposited Parylene-C thin film will be used to analyze interfacial effects in multilayer Parylene-C - Silica laminar structures.