AVS 53rd International Symposium
    Electronic Materials and Processing Thursday Sessions
       Session EM-ThP

Paper EM-ThP23
Ferroelectric and Dielectric Properties of BLT Capacitors Fabricated by Damascene Process using Chemical Mechanical Polishing

Thursday, November 16, 2006, 5:30 pm, Room 3rd Floor Lobby

Session: Electronic Materials and Processing Poster Session
Presenter: S.H. Shin, Chosun University, Korea
Authors: S.H. Shin, Chosun University, Korea
P.J. Ko, Chosun University, Korea
N.H. Kim, Chosun University, Korea
W.-S. Lee, Chosun University, Korea
Correspondent: Click to Email
Nonvolatile memory devices using ferroelectric thin films such as PZT, SBT and BLT have attracted attention because of their non-volatility and high-speed operations. However, commercial use of PZT ferroelectric memory devices has been hindered largely by fatigue, defined as the decrease of switchable polarization with electric field cycling in ferroelectrics. Whereas, as a fatigue-free material, SBT is limited in the practical application due to its small polarization and high processing temperature. More recently, BLT is of particular interest, as it is not only crystallized at relatively low processing temperature, but also shows highly fatigue resistance and large remanent polarization. Meanwhile, these submicron ferroelectric capacitors were fabricated by a damascene process using Chemical mechanical polishing (CMP). The fabricated capacitors consisted of BLT thin film with top and bottom electrodes. The P-E characteristics of BLT capacitors fabricated by CMP were examined at various voltages and room temperature. Remanent polarization was identified by the measuring of electric hysteresis loops for the capacitors. Dielectric property and loss factor (dissipation factor) were investigated as a function of frequency with LCR meter. Ferroelectric BLT capacitors were practicable by a damascene process using CMP, which realized a vertical sidewall.