| IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11) | |
| Electronics | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| EL-TuP1 Fabrication of GaN Blue LED by a Laser Lift-Off(LLO) Method D.W. Kim, C.H. Jeong, Sungkyunkwan University, Korea, Y.J. Sung, Samsung Advanced Institute of Technology, H.S. Kim, Samsung Electronics Ltd., G.Y. Yeom, Sungkyunkwan University, Korea |
| EL-TuP3 Crystal Growth and Characterization of AgAlS@sub 2@ Crystals for Blue Light Emitting Device K. Yoshino, Y. Akaki, H. Komaki, Miyazaki University, Japan, M. Yoneta, Okayama University of Science, Japan, T. Ikari, Miyazaki University, Japan |
| EL-TuP4 Effect of Substrate Position in i-ZnO Thin Film Formation to Cu(In,Ga)Se@sub 2@ Solar Cell T. Yamaguchi, Wakayama National College of Technology, Japan, T. Tanaka, Saga University, Japan, A. Yoshida, Toyohashi University of Technology, Japan |
| EL-TuP5 Optical Characterization of AgInGaS@sub 2@ Crystals for Nonlinear Optical Devices K. Yoshino, K. Itani, H. Komaki, Miyazaki University, Japan, S. Chichibu, Tsukuba University, Japan, Y. Akaki, T. Ikari, Miyazaki University, Japan |
| EL-TuP6 P-type Control of Sb-doped CuIn@sub 2@ Crystals for Solar Cell Application K. Yoshino, H. Komaki, Miyazaki University, Japan, M. Yoneta, Okayama University of Science, Japan, Y. Akaki, T. Ikari, Miyazaki University, Japan |
| EL-TuP7 Focused Ion Beam Induced Damage in the Transmission Electron Microscopy Specimen of Semiconductor Devices N. Kato, IBM Japan, H. Saka, Nagoya University, Japan |
| EL-TuP8 A Study on the Germanosilicide Formation in the Ni/Si@sub 1-X@Ge@sub X@ System for CMOS Device Applications H.-J. Choi, D.-H. Ko, Yonsei University, Korea, J.-H. Ku, C.-J. Choi, S. Choi, K. Fujihara, H.-K. Kang, Samsung Electronics Co., Korea, C.-W. Yang, Sungkyunkwan University, Korea |
| EL-TuP9 Positron Annihilation Studies of Defects at Metal-silicon Carbide Interfaces P.R. Dunstan, H.M. Fretwell, D. Jones, S.P. Wilks, M. Charlton, D.P. van der Werf, University of Wales, UK, A. van Veen, H. Schut, Interfaculty Reactor Institute (IRI), Netherlands |
| EL-TuP10 Effects of Surface Band Bending on Electrical Properties of AlGaN/GaN HFET Observed by I-V and XPS Measurements J.-L. Lee, K.J. Choi, C.M. Jeon, Pohang University of Science and Technology (POSTECH), Korea, J.H. Lee, Kyungpook National University, Korea |
| EL-TuP11 Structural and Electrical Characteristics of CVD-CoSi2/Si0.83Ge0.17/Si(001) S.H. Ban, Y.S. Ahn, D.O. Shin, N.-E. Lee, Sungkyunkwan University, Korea, B.T. Ahn, Korea Advanced Institute of Science and Technology, K.-H. Shim, Electronics and Telecommunications Research Institute, Korea |
| EL-TuP12 On the Induced Net Charge Density at ICB Deposited MS Interface B. Cvikl, J. Stefan Institute, Slovenia |
| EL-TuP13 Electrical Properties of Cd Vapor Pressured CdZnTe for HgCdTe Passivation S.Y. An, Korea Institute of Science and Technology |
| EL-TuP14 A Study of Iron-Contaminated p-type Silicon by Scanning Probe Microscopy M.N. Chang, National Nano Device Laboratories, Taiwan, R. O. C., T.Y. Chang, National Chiao Tung University, Taiwan, R. O. C., C.Y. Chen, F.M. Pan, B.W. Wu, National Nano Device Laboratories, Taiwan, R. O. C., T.F. Lei, National Chiao Tung University, Taiwan, R. O. C. |
| EL-TuP15 Effect of Surface Clean on CVD SiGe Growth J.-S. Maa, D. Tweet, S.T. Hsu, Sharp Laboratories of America |
| EL-TuP16 The Behavior of Dopant Boron during TiSi@sub2@ Formation Y.S. Chung, Samsung Advanced Institute of Technology, Korea, H.S. Park, Samsung Electronics Co., LTD, Korea, J.Y. Won, J.M. Choi, Samsung Advanced Institute of Technology, Korea |
| EL-TuP17 The Investigation of Electroless-plated Copper on TaN/Si as Self-catalyzed by MEVVA Ion Implanter U.-S. Chen, J.-H. Lin, W.-J. Hsieh, P.-S. Shih, H.C. Shih, National Tsing Hua University, Taiwan |
| EL-TuP18 Selective Electroless-Plated Copper for Deep Sub-micron Interconnect Metallization Through the Catalytic Effect of Cu/ Pd by PIII J.-H. Lin, W.-J. Hsieh, X.-W. Liu, C.-S. Kou, H.C. Shih, National Tsing Hua University, Taiwan |
| EL-TuP19 The Morphology and Strain-induced Defect-structure of Ultrathin Epitaxial Fe Films Grown on Mo(110) S. Murphy, D. Mac Mathuna, G. Mariotto, I. Shvets, Trinity College, Ireland |
| EL-TuP22 Codoping of Magnetron-Sputter Deposited ZnS:TbOF with Ce for Electroluminescent Phosphors J.P. Kim, M.R. Davidson, University of Florida, D. Moorehead, Uniroyal Optoelectronics, M. Puga-Lambers, University of Florida, Q. Zhai, CORNING Lasertron, P.H. Holloway, University of Florida |
| EL-TuP23 Improved Efficiency and Space Charge Effects in ZnS:Mn ACTFEL Devices Co-Doped with KCl J.S. Lewis, MCNC, M.R. Davidson, Q. Zhai, K. Waldrip, P.H. Holloway, University of Florida |
| EL-TuP24 Dry Etching of Sapphire for the Device Isolation using BCl@sub3@/Cl@sub2@(SiCl@sub4@) Inductively Coupled Plasmas C.H. Jeong, D.W. Kim, J.H. Kim, Sungkyunkwan University, Korea, Y.J. Sung, S.H. Chae, J.S. Kwak, Y.J. Park, Samsung Advanced Institute of Technology, Korea, G.Y. Yeom, Sungkyunkwan University, Korea |
| EL-TuP25 Etching of CeO@sub 2@ Thin Films in CF@sub 4@/Cl@sub 2@/Ar Plasma C.I. Kim, C.S. Oh, D.P. Kim, Chung-Ang University, Korea, C.I. Lee, An-San College of Technology, Korea, T.H. Kim, Yeojoo Institute of Technology, Korea, E.H. Kim, Cheju National University, Korea, E.G. Chang, Chung-Ang University, Korea |
| EL-TuP26 Near-zero-thickness Molecular-layer Diffusion-barriers for Interconnect Applications G. Ramanath, K. Chanda, X. Guo, M. Stukowski, Rensselaer Polytechnic Institute, S. Nitta, IBM Microelectronics |
| EL-TuP27 Effect of Interfacial Underlayers on Electromigration in Epitaxial Cu(001) Lines R. Goswami, H.S. Goindi, H. Kim, M.J. Frederick, G. Ramanath, Rensselaer Polytechnic Institute, C.-S. Shin, I. Petrov, J.E. Greene, University of Illinois, Urbana |
| EL-TuP29 Vaporization Characteristics for Liquid Precursor of Cu-CVD S. Akiyama, A. Sekiguchi, K. Yamada, K. Sekiya, T. Sasaki, ANELVA Corporation, Japan |
| EL-TuP31 Preferred Growth of Cu Thin Films on Ta and TaN@sub x@ Diffusion Barriers J.H. Wang, J.C. Hu, L.J. Chen, National Tsing Hua University, Taiwan, R.O.C., Z.C. Lu, C.S. Hsiung, W.Y. Hsieh, T.R. Yew, United Microelectronics Corporation, Taiwan, R.O.C. |
| EL-TuP32 Formation of Titanium Silicides on Silicon-on-Insulator Wafers C.H. Liu, C.J. Tsai, L.J. Chen, National Tsing Hua University, Taiwan, R.O.C. |
| EL-TuP33 Diffusion Barrier Properties of Metallorganic Chemical Vapor Deposited Niobium Nitride Films Against Cu Metallization C.W. Wu, W.C. Gau, J.C. Hu, National Tsing Hua University, Taiwan, ROC, T.C. Chang, National Sun Yat-Sen University, Taiwan, ROC, C.H. Chen, C.J. Chu, Namat Technology Co., LTD., Taiwan, ROC, L.J. Chen, National Tsing Hua University, Taiwan, ROC |
| EL-TuP34 On Thermostability of Sulphur Complexes with Metals of Transition Group in Silicon M. Arzikulova, E.U. Arzikulov, T.U. Tashbaev, S.N. Sradjev, Samarkand State University, Uzbekistan |
| EL-TuP35 The Theory of Multiphonon Resonant Raman Scattering in a Quantum Well A. Eshpulatov, Samarkand State University, Uzbekistan |
| EL-TuP36 Scanning Spreading Resistance Microscopy Bias Dependence of Doped III-V Semiconductors R.P. Lu, University of California, San Diego, K.L. Kavanagh, Simon Fraser University, Canada, St.J. Dixon-Warren, A.J. SpringThorpe, R. Streater, Nortel Networks, Canada |
| EL-TuP37 Recombination Properties of Heavily Doped GaAs R.K. Ahrenkiel, W. Metgzer, R. Ellingson, National Renewable Energy Laboratory, D.I. Lubyshev, W.K. Liu, Quantum Epitaxial Designs, Inc. |