IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Electronics Tuesday Sessions
       Session EL-TuP

Paper EL-TuP1
Fabrication of GaN Blue LED by a Laser Lift-Off(LLO) Method

Tuesday, October 30, 2001, 5:30 pm, Room 134/135

Session: Electronic Materials Poster Session
Presenter: D.W. Kim, Sungkyunkwan University, Korea
Authors: D.W. Kim, Sungkyunkwan University, Korea
C.H. Jeong, Sungkyunkwan University, Korea
Y.J. Sung, Samsung Advanced Institute of Technology
H.S. Kim, Samsung Electronics Ltd.
G.Y. Yeom, Sungkyunkwan University, Korea
Correspondent: Click to Email
Recently, GaN-based optoeletronic devices such as light emitting diodes(LEDs) and laser diodes(LDs) in blue and ultraviolet wavelength regions have been studied intensively and also fabricated successfully. However, the contacts to GaN-based LEDs are currently made by depositing metal layers on the top of GaN-based LEDs, therefore, significant optical loss is inevitable. In this study, transparent conducting oxide such as indium tin oxide(ITO) was applied to n-GaN after the laser lift off(LLO) of the GaN quantum well device structures. Also, in this device, blanket Pd was deposited as a contact material to p-GaN. ITO and Pd were deposited at room temperature using a conventional electron beam evaporator. Thermal annealing at various temperatures and environments was followed in a tube furnace. The electrical and physical properties of ITO contact to laser lift-off n-GaN and Pd contact to p-GaN were investigated. Contact resistivities and I-V characteristics of the ITO and Pd contacts were measured to estimate the contact and electrical properties of ITO and Pd contacts fabricated on the laser lift-off n-GaN and p-GaN, respectively. The optical properties of the deposited and annealed ITO films were also investigated. GaN LEDs device performance fabricated by LLO was investigated and compared to conventionally prepared GaN-LEDs.