IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Electronics Tuesday Sessions
       Session EL-TuP

Paper EL-TuP18
Selective Electroless-Plated Copper for Deep Sub-micron Interconnect Metallization Through the Catalytic Effect of Cu/ Pd by PIII

Tuesday, October 30, 2001, 5:30 pm, Room 134/135

Session: Electronic Materials Poster Session
Presenter: J.-H. Lin, National Tsing Hua University, Taiwan
Authors: J.-H. Lin, National Tsing Hua University, Taiwan
W.-J. Hsieh, National Tsing Hua University, Taiwan
X.-W. Liu, National Tsing Hua University, Taiwan
C.-S. Kou, National Tsing Hua University, Taiwan
H.C. Shih, National Tsing Hua University, Taiwan
Correspondent: Click to Email
The major goal of this study is to combine the techniques of using plasma immersion ion implantation (PIII) to implant Pd or Cu as a catalyst seed layer onto a TaN diffusion barrier layer and electroless plated Cu to accomplish the ULSI interconnection metallization. Both patterned and blanked wafers were employed using Pd or Cu as catalyst by PIII after which copper was electroless plated on a TaN/FSG/Si multi-layer structure. Either Pd or Cu atoms were sputtered from a negatively biased target and ionized in an argon inductively coupled plasma (ICP). The metal ions were adequately implanted into the substrate with a highly pulsed negative bias (~4000 V). The observation of FESEM indicated that under the circumstances of higher substrate bias voltage and plasma ionization, the electroless copper grows upward from the bottom of the vias (width: 0.25 µm; aspect ratio: 7) layer by layer, with an excellent gap filling ability without the final centered seam. The result of the pull-up test, showed that higher substrate bias and higher plasma density to implant Cu as seed layer can effectively enhance the adhesion strength between electroless-plated copper film and TaN layer.