IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Electronics Tuesday Sessions
       Session EL-TuP

Paper EL-TuP15
Effect of Surface Clean on CVD SiGe Growth

Tuesday, October 30, 2001, 5:30 pm, Room 134/135

Session: Electronic Materials Poster Session
Presenter: J.-S. Maa, Sharp Laboratories of America
Authors: J.-S. Maa, Sharp Laboratories of America
D. Tweet, Sharp Laboratories of America
S.T. Hsu, Sharp Laboratories of America
Correspondent: Click to Email
Low temperature growth of CVD SiGe was found very sensitive to surface condition. Proper preparation of surface in HF dip or DI rinse is essential to control the SiGe film quality. SiGe films were characterized by high-resolution x-ray diffraction, the effect of surface clean was revealed by the sharpness of the periodic modulation of peaks. SiGe formed on poorly prepared surface resulted in a diffraction pattern with mostly washed out peaks indicating poor crystallinity or a rough surface. The quality of SiGe film was correlated to trace contamination at interface as demonstrated by SIMS. Procedures of surface preparation, including wet process and in-situ vapor etch, and their effects on film quality will be discussed.