IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Electronics Tuesday Sessions
       Session EL-TuP

Paper EL-TuP34
On Thermostability of Sulphur Complexes with Metals of Transition Group in Silicon

Tuesday, October 30, 2001, 5:30 pm, Room 134/135

Session: Electronic Materials Poster Session
Presenter: E.U. Arzikulov, Samarkand State University, Uzbekistan
Authors: M. Arzikulova, Samarkand State University, Uzbekistan
E.U. Arzikulov, Samarkand State University, Uzbekistan
T.U. Tashbaev, Samarkand State University, Uzbekistan
S.N. Sradjev, Samarkand State University, Uzbekistan
Correspondent: Click to Email
Under determined conditions of doping p-Si (@rho@ = 10 @Ohm@ cm) Sulphur and both Cd and Zn all electric active atoms form electric neutral complexes among ach other. Electrical properties of the material are reimbursed in this case. Influence of heat treatment (HT) at different temperatures on stability of the complexes and determination of their effect on thermic flaw generation are investigated in the paper. Si samples were doped consequently with S, Cd, Zn at effective temperatures of complex formation among the impurities. The samples were treated at 100 - 1150 ° for 1 h after doping. Resistiveties of the samples were measured after each cycle of the treatment. Si(B,S), Si(B,Cd), Si(B,Zn) samples were also treated under the same conditions for comparison purposes. Results showed that before HT parameters of Si(B,S,Cd), Si(B,S,Zn) samples are comparable with those of before doping: p-type of conductivity and @rho@ = 10 @Ohm@ cm. We consider that all electrically active S, Cd, Zn atoms are bounded in electrically neutral complexes. Their concentration according to calculations are N@sub Cd@ = 2x10@super 16@ cm@super -3@ N@sub Zn@ = 2x10@super 16@ cm@super -3@ and the rest of S atoms are in nonequilibrium states in the dissociation centers. We conclude that first of all electric neutral S, Cd, Zn atoms are stable enough up until 1100 °. At the temperatures above partial or total dissociation takes place and properties of the material are determined by Si atoms. Secondly, formation of the electrically neutral complexes prevents thermic flaws generation.