IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Electronics Tuesday Sessions
       Session EL-TuP

Paper EL-TuP25
Etching of CeO@sub 2@ Thin Films in CF@sub 4@/Cl@sub 2@/Ar Plasma

Tuesday, October 30, 2001, 5:30 pm, Room 134/135

Session: Electronic Materials Poster Session
Presenter: C.I. Lee, An-San College of Technology, Korea
Authors: C.I. Kim, Chung-Ang University, Korea
C.S. Oh, Chung-Ang University, Korea
D.P. Kim, Chung-Ang University, Korea
C.I. Lee, An-San College of Technology, Korea
T.H. Kim, Yeojoo Institute of Technology, Korea
E.H. Kim, Cheju National University, Korea
E.G. Chang, Chung-Ang University, Korea
Correspondent: Click to Email
Cerium dioxide was used as the intermediate layer between the ferroelectric thin film and Si substrate in a metal-ferroelectric-semiconductor field effect transistor (MFSFET), to improve the interface property by preventing the interdiffusion of the ferroelectric material and the Si substrate. In this study, CeO@sub 2@ thin films were etched with a CF@sub 4@/Cl@sub 2@/Ar gas combination in inductively coupled plasma (ICP). The CF@sub 4@/(CF@sub 4@+Ar) was fixed at 0.2, and the CeO@sub 2@ thin films were etched by adding Cl@sub 2@. Etching properties of CeO@sub 2@ were measured according to the various etching parameters such as radio frequency power (400~600 W), direct current bias voltage (-150~-300 V), and chamber pressure (10~20 mTorr). Chemical reaction of etched CeO@sub 2@ thin films was investigated with x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). In order to analyze the effect of radical density of F, Cl and ion current density as a function of Cl@sub 2@ percentage in CF@sub 4@/Ar, optical emission spectroscopy (OES) and single Langmuir probe were used. The profile of etched CeO@sub 2@ thin films investigated with scanning electron microscopy (SEM).