IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Electronics Tuesday Sessions
       Session EL-TuP

Paper EL-TuP11
Structural and Electrical Characteristics of CVD-CoSi2/Si0.83Ge0.17/Si(001)

Tuesday, October 30, 2001, 5:30 pm, Room 134/135

Session: Electronic Materials Poster Session
Presenter: S.H. Ban, Sungkyunkwan University, Korea
Authors: S.H. Ban, Sungkyunkwan University, Korea
Y.S. Ahn, Sungkyunkwan University, Korea
D.O. Shin, Sungkyunkwan University, Korea
N.-E. Lee, Sungkyunkwan University, Korea
B.T. Ahn, Korea Advanced Institute of Science and Technology
K.-H. Shim, Electronics and Telecommunications Research Institute, Korea
Correspondent: Click to Email
Silicide formation on SiGe alloys has been studied for low-resistance contacts and Schottky barrier contacts for various applications. Among the various silicides, CoSi@sub2@ is a very attractive material due to its low resistivity, one of the more promising candidates for making high performance Schottky barrier devices, and possibility of self-aligned silicide formation at relatively low temperatures. Recently, there have been several investigations on CoSi@sub2@ deposited by molecular beam epitaxy on SiGe alloys or silicidation of sputter-deposited Co layers on SiGe alloys, but no reports on CoSi@sub2@ deposited by CVD on SiGe alloys so far as we know. In this study, we investigated structural and electrical properties of CVD-CoSi@sub2@/Si@sub0.83@Ge@sub0.17@/Si(001) contacts by structural, chemical, and electrical analyses. Uniform cobalt disilicide (CoSi@sub2@) layers has been grown in-situ at 100 mTorr on p-type and n-type Si@sub0.83@Ge@sub0.17@ grown on p-type Si(001) by metal organic chemical vapor deposition (MOCVD) at 600 °C using cyclopentadienyl cobalt, Co(h@sub5@-C@sub5@H@sub5@)(CO)@sub2@ with 10 sccm of H@sub2@ carrier gas. The interfacial, structural, and chemical properties of MOCVD-CoSi@sub2@/Si@sub0.83@Ge@sub0.17@ were analyzed by x-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), Rutherford backscattering spectroscopy (RBS), and Auger electron spectroscopy (AES). The effective Schottky barrier heights and electrical properties of CVD-CoSi@sub2@/Si@sub0.83@Ge@sub0.17@/Si(001) were measured by current-voltage (I-V) measurement and the sheet resistance measurement, respectively. The measured effective Schottky barrier heights are in the range of 0.55-0.60 eV for CVD-CoSi@sub2@/n-Si@sub0.83@Ge@sub0.17@/Si(001) without showing significant dependence of measured fBn on the annealing temperature, Ta = 450 °C to 800 °C.