IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Electronics Tuesday Sessions
       Session EL-TuP

Paper EL-TuP4
Effect of Substrate Position in i-ZnO Thin Film Formation to Cu(In,Ga)Se@sub 2@ Solar Cell

Tuesday, October 30, 2001, 5:30 pm, Room 134/135

Session: Electronic Materials Poster Session
Presenter: T. Yamaguchi, Wakayama National College of Technology, Japan
Authors: T. Yamaguchi, Wakayama National College of Technology, Japan
T. Tanaka, Saga University, Japan
A. Yoshida, Toyohashi University of Technology, Japan
Correspondent: Click to Email
Heterojunction devices based on Cu(In,Ga)Se@sub 2@ thin films are considered to be one of leading candidates for low-cost photovoltaic power system. Laboratory-size devices by using the three-stage process have exceeded 18% conversion efficiencies.@footnote 1@ We have also attempted to fabricate solar cells based on Cu(In,Ga)Se@sub 2@ thin films by using a thermal crystallization technique for large scale industrial production.@footnote 2@ For improvement in solar cell performance, it is effective to use a buffer layer with the suppression of the leakage current and the decrease in buffer absorption loss. ZnO thin films have attracted considerable attention for buffer films, because of their high resistivity, good optical transmittance from UV to near IR, and low-cost fabrication. In this study, ZnO thin films were prepared by rf magnetron sputtering of non-doped ZnO target in Ar gas under the various substrate positions and their films were applicated to solar cells. We have characterized ZnO thin films and investigated the solar cell performance. The resistivity and the full width at half maximum (FWHM) in XRD diffraction peak were rapidly changed depending on the substrate position. The characteristics of solar cells were correspondent to the change of the resistivity and the FWHM in ZnO thin films. @FootnoteText@ @footnote 1@ M.A.Contreras, B.Egaas, K.Ramanathan, J.Hiltner, A.Swartzlander, F.Hasoon and R.Noufi, Prog. Photovolt. Res. Appl. 7, 300 (1999). @footnote 2@ T.Yamaguchi, T. Kobata, S. Niiyama, T. Nakamura, A. Yoshida, Tech. Digt. of PVSEC-12 (Cheju, 2001) to be published.