IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Electronics Tuesday Sessions
       Session EL-TuP

Paper EL-TuP29
Vaporization Characteristics for Liquid Precursor of Cu-CVD

Tuesday, October 30, 2001, 5:30 pm, Room 134/135

Session: Electronic Materials Poster Session
Presenter: S. Akiyama, ANELVA Corporation, Japan
Authors: S. Akiyama, ANELVA Corporation, Japan
A. Sekiguchi, ANELVA Corporation, Japan
K. Yamada, ANELVA Corporation, Japan
K. Sekiya, ANELVA Corporation, Japan
T. Sasaki, ANELVA Corporation, Japan
Correspondent: Click to Email
A liquid precursor vaporizer used in Cu-CVD equipment for semiconductor metallization was studied. Important issues are high rate vaporization at low temperature around 70°C, suppression of decomposition of the precursor, quick response, and stability. One of equipments made on an experimental basis consists of a rectangular aluminum with about a 22 cm * 7 cm warm section inclined by a certain angle from the horizontal line, where liquid precursor was supplied to spread on the surface and Ar was separately supplied as carrier gas. With inclination angle of 5°, sufficiently high vaporization rate of 2.4 g/min for Cu(hfac)(tmvs) could be obtained at 70°C, 500 Pa. Investigated parameters effective on vaporizing ability were inclination angle, total pressure, and temperature of warm section. Vaporization rate for Cu(hfac)(tmvs) was measured at inclination angle between horizontal line and 30°, at pressure between 330 and 500 Pa, and at temperature between 55 and 70°C. The vaporization rate at 5°, 500 Pa, and 70°C was 43.3 mg/(min)(cm@super 2@). It increased to 60.7 mg/(min)(cm@super 2@) by increasing the angle to 15°, and increased to 88.9 mg/(min)(cm@super 2@) by decreasing the pressure to 330 Pa. Even at lower temperature of 60°C, 21.7 mg/(min)(cm@super 2@) was obtained. In order to obtain the required precursor flow rate, the vaporization surface area have to be obtained, which is based on the vaporization rate for each method. In this case, a vaporization surface area of 57.7 cm@super 2@ was required to achive a deposition rate of 100 nm/min for 300 mm wafer.