IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Electronics Tuesday Sessions
       Session EL-TuP

Paper EL-TuP6
P-type Control of Sb-doped CuIn@sub 2@ Crystals for Solar Cell Application

Tuesday, October 30, 2001, 5:30 pm, Room 134/135

Session: Electronic Materials Poster Session
Presenter: H. Komaki, Miyazaki University, Japan
Authors: K. Yoshino, Miyazaki University, Japan
H. Komaki, Miyazaki University, Japan
M. Yoneta, Okayama University of Science, Japan
Y. Akaki, Miyazaki University, Japan
T. Ikari, Miyazaki University, Japan
Correspondent: Click to Email
Among ternary chalcopyrite semiconductors, CuInS@sub 2@ may be the most promising material for photovoltaic applications due to the bandgap of 1.5 eV which perfectly matches the solar spectrum for energy conversion. However, the conversion efficiency of the CuInS@sub 2@ based solar cells are so far limited to around 12 %.@footnote 1@ One reason for this relatively low efficiency is that the physical properties of CuInS@sub 2@ are not accurately known because high-quality single crystal growth of CuInS@sub 2@ is difficult in comparison to CuInSe@sub 2@ and CuGaSe@sub 2@.In this work, the CuInS@sub 2@ crystals are grown by Hot-Press (HP) method at 400 ~ 700 °C for 1 h under high presser (10 ~ 100 MPa). One of the advantages of the HP method is that a crystal growth is easy at low temperature. The sizes of the samples are 2 cm in diameter. All samples indicate chalcopyrite structures, nearly stoichiometry and n-type by means of X-ray diffraction, electron probe microanalysis and thermoprobe analysis, respectively. However, the sample grown at 400 °C has an also different phase (CuIn@sub 11@S@sub 17@). According to increasing temperatures, the sample does not have the different phase. In the photoluminescence spectra at 77 K, donor-acceptor pair emission band may be remarkably observed. The samples have both donor and acceptor-types impurities. Furthermore, p-type CuInS@sub 2@ crystals can be obtained by Sb-dopong. Volume resistivity of the CuInS@sub 2@ crystal increases by increasing the concentration of Sb (less than 0.1 atm. %). The resistivity can be also controlled by concentration of the Sb-doping. @FootnoteText@ @footnote 1@D. Braunger, D. Hariskos, T. Walter and H. W. Schock, Sol. Energy Mater. and Sol. Cells 40, 97 (1996).