IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Electronics Tuesday Sessions
       Session EL-TuP

Paper EL-TuP36
Scanning Spreading Resistance Microscopy Bias Dependence of Doped III-V Semiconductors

Tuesday, October 30, 2001, 5:30 pm, Room 134/135

Session: Electronic Materials Poster Session
Presenter: R.P. Lu, University of California, San Diego
Authors: R.P. Lu, University of California, San Diego
K.L. Kavanagh, Simon Fraser University, Canada
St.J. Dixon-Warren, Nortel Networks, Canada
A.J. SpringThorpe, Nortel Networks, Canada
R. Streater, Nortel Networks, Canada
Correspondent: Click to Email
Scanning Spreading Resistance Microscopy profiling of III-V optoelectronic devices has been previously demonstrated. It is clear that the physical interactions between the SSRM tip and the semiconductor sample are not well understood. The overall measured SSRM resistance is the sum of the spreading resistance and contact resistances. To obtain a better understanding of the role of the contact resistance, we have conducted SSRM measurements of current as a function of sample bias for a large dynamic range of doping densities (10@super 16@ - 10@super 19@ cm@super -3@). For this paper, we propose a model based on Fermi level pinning. Theoretical calculations correlate well with experimental SSRM results for both GaAs and InP.