IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Electronics Tuesday Sessions
       Session EL-TuP

Paper EL-TuP17
The Investigation of Electroless-plated Copper on TaN/Si as Self-catalyzed by MEVVA Ion Implanter

Tuesday, October 30, 2001, 5:30 pm, Room 134/135

Session: Electronic Materials Poster Session
Presenter: U.-S. Chen, National Tsing Hua University, Taiwan
Authors: U.-S. Chen, National Tsing Hua University, Taiwan
J.-H. Lin, National Tsing Hua University, Taiwan
W.-J. Hsieh, National Tsing Hua University, Taiwan
P.-S. Shih, National Tsing Hua University, Taiwan
H.C. Shih, National Tsing Hua University, Taiwan
Correspondent: Click to Email
This work attempts to implant Cu ions into TaN/Si as catalyst by using metal vapour vacuum arc (MEVVA) ion implanter for electroless Cu plating. The range of dose is between 5.0¡Ñ10@super 15@ and 1.0¡Ñ10@super 17@ ions/cm@super 2@. Ion energy is from 40 to 50 keV. These specimens were subsequently deposited with a thin layer of Cu in an electroless bath developed by this group. Furthermore, the electroless plated copper films were studied by SIMS, SEM, four point probe for electric resistivity, XRD and a mechanical pull-up test. First of all, a noticed relationship between SIMS depth profiles and ion energy is established. All the sheet resistance of specimens are lower than 1.85 µm@ohm@-cm after 300°C annealing for 1 hour. An excellent step coverage and gap filling in sub-micron trench/via were observed by FESEM. The result also indicated that the higher the ion dose/energy, the larger value of adhesion as we obtained from the pull-up test.