IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Electronics Tuesday Sessions
       Session EL-TuP

Paper EL-TuP3
Crystal Growth and Characterization of AgAlS@sub 2@ Crystals for Blue Light Emitting Device

Tuesday, October 30, 2001, 5:30 pm, Room 134/135

Session: Electronic Materials Poster Session
Presenter: Y. Akaki, Miyazaki University, Japan
Authors: K. Yoshino, Miyazaki University, Japan
Y. Akaki, Miyazaki University, Japan
H. Komaki, Miyazaki University, Japan
M. Yoneta, Okayama University of Science, Japan
T. Ikari, Miyazaki University, Japan
Correspondent: Click to Email
Among ternary chalcopyrite semiconductors, AgAlS@sub 2@ may be promising material for blue light emitting device since the sample is a direct transition type and the bandgap of 3.1 eV at room temperature. However, it is well known that the chalcopyrite semiconductors have many intrinsic defects. The crystal growth of high quality is a difficult because of high melting point and ternary compound. Therefore, reports on the precise material characterizations of the AgAlS@sub 2@ crystals are a few in comparison with other chalcopyrite semiconductors.In this work, the AgAlS@sub 2@ crystals are grown by Hot-Press (HP) method at 400 ~ 700 °C for 1 h under high presser (10 ~ 100 MPa). One of the advantages of the HP method is that a crystal growth is easy at low temperature. The sizes of the samples are 2 cm in diameter. All samples indicate chalcopyrite structures, nearly stoichiometry and n-type by means of X-ray diffraction, electron probe microanalysis and thermoprobe analysis, respectively. In the photoluminescence spectra at liquid nitrogen temperature, donor-acceptor pair emission band may be remarkably observed. The samples have both donor and acceptor-types impurities.