IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Electronics Tuesday Sessions
       Session EL-TuP

Paper EL-TuP16
The Behavior of Dopant Boron during TiSi@sub2@ Formation

Tuesday, October 30, 2001, 5:30 pm, Room 134/135

Session: Electronic Materials Poster Session
Presenter: Y.S. Chung, Samsung Advanced Institute of Technology, Korea
Authors: Y.S. Chung, Samsung Advanced Institute of Technology, Korea
H.S. Park, Samsung Electronics Co., LTD, Korea
J.Y. Won, Samsung Advanced Institute of Technology, Korea
J.M. Choi, Samsung Advanced Institute of Technology, Korea
Correspondent: Click to Email
The TiSi@sub 2@ formation by plasma-enhanced chemical vapor deposition (PECVD) and the reaction of B doped Si with the overlaying silicide were investigated by X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and secondary ion mass spectroscopy (SIMS). TiSi@sub 2@ with C49 phase was formed on Si substrate at 630°C using TiCl@sub 4@ source gas. The reaction of dopant boron implanted in Si with the silicide leads to the formation of TiB@sub 2@ at the TiSi@sub 2@-Si interface, which was confirmed by XPS and SIMS. The bonding of Ti-B at the interface resulted in the increase of the contact resistance. The effects of heat treatment in TiSi@sub2@ growth and boron behavior also will be discussed.