IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Electronics Tuesday Sessions
       Session EL-TuP

Paper EL-TuP35
The Theory of Multiphonon Resonant Raman Scattering in a Quantum Well

Tuesday, October 30, 2001, 5:30 pm, Room 134/135

Session: Electronic Materials Poster Session
Presenter: A. Eshpulatov, Samarkand State University, Uzbekistan
Correspondent: Click to Email
The theory of multiphonon resonant Raman scattering (MPRRS) with the partisipation of the quasi-two-dimensional (Q2D) excitons as intermediate states is developed ffor a quantum well (QW). It is shown that the scattering cross section is proportional to (. ( is the dimensionless exciton-LO-phonon coupling constant) in the maximum of the scattering peak. It means that the obtained contribution into cross section is essentially bigger than the contribution of free electron-hole pairs (EHP) in the Q2D system@footnote 1@ and than the contribution of 3D-excitons in bulk semiconductor.@footnote 2@ The enhancement of the MPRRS in comparision with the bulk case is explaned by the possibility of the real LO-phonon emission in QW in the frequency region (corresponding to the direct creation or direct annihilation) while in the bulk semiconductor two phonon scattering consists from two indirect processes- creation and annihilation of exciton. The enhancement of the scattering in comparision with the EHP as the intermediate states sown that into the Q2DS the excitonic mechanism of MPRRS dominants. It is justified especialy in the case of two-phonon resonant Raman scattering when the exciton presents only in the act of the indirect creation (or indirectannihilation) and monoemission of the LO-phonon. @FootnoteText@@footnote 1@L.I. Korovin, S.T. Pavlov & B.E. Eshpulatov, Pis'ma Zh. Eksp. Teor. Fiz. 51, 516, (1990); [JEPT Lett., 51, 584, (1990)]. @footnote 2@A.V. Goltsev, I.G. Lang, S.T. Pavlov & M.F. Bryzhina, J. Phys. C., 63, 4221 (1983).