| AVS 50th International Symposium | |
| Thin Films | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| TF-WeP1 A Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect H.S. Sim, S.I. Kim, Korea Institute of Science and Technology, H. Jeon, Hanyang University, Korea, Y.T. Kim, Korea Institute of Science and Technology |
| TF-WeP2 Atomic Layer Deposition of Iron Oxide Thin Films T.M. Klein, L.A. Falco, University of Alabama |
| TF-WeP3 Spatially Regulated Growth of SnO@sub 2@ Thin Films on Si-C Linked Monolayer Template Based on Self-Assembly Technique: Fabrication of Micro Sensor Arrays N. Shirahata, A. Hozumi, Y. Yokogawa, T. Kameyama, National Institute of Advanced Industrial Science and Technology, Japan, W.S. Seo, Advanced Materials Analysis & Evaluation Center, Korea, K. Koumoto, Nagoya University, Japan |
| TF-WeP4 The Effect of Temperature on the Materials Properties of Low k Films Deposited from Organosilicon Precursors M.L. O'Neill, A.S. Lukas, R.N. Vrtis, J.L. Vincent, E.J. Karwacki, B.K. Peterson, M.D. Bitner, Air Products and Chemicals, Inc. |
| TF-WeP5 Photocatalytic Activity and Surface Wettability of TiO@sub 2@/SnO@sub 2@ Heterojunction System N. Kanai, C. Saiki, The University of Tokyo, Japan, Y. Fukunaga, M. Abe, Tokyo University of Science, Japan, K. Hashimoto, T. Watanabe, H. Ohsaki, The University of Tokyo, Japan |
| TF-WeP6 Characterization of PECVD Low-k Films by Positronium-Annihilation Lifetime Spectroscopy T. Ohdaira, R. Suzuki, National Institute of Advanced Industrial Science and Technology (AIST), Japan, Y. Shioya, K. Maeda, Semiconductor Process Laboratory (SPL), Japan |
| TF-WeP7 Structural and Electronic Properties of (CdTe)@sub x@(In@sub 2@Te@sub 3@)@sub 1-x@ Thin Films Grown by RF Co-Sputtering@footnote 1@ S. Jimenez-Sandoval, M. Melendez-Lira, Cinvestav-IPN, Mexico, M. Zapata-Torres, CICATA-IPN, Mexico |
| TF-WeP9 P-Type Semiconducting Cu@sub 2@O-NiO Thin Films Prepared by Magnetron Sputtering T. Minami, H. Tanaka, T. Shimakawa, Kanazawa Institute of Technology, Japan |
| TF-WeP10 Photocatalytic Related Properties and Structure of Titanium Oxide Films C.B. Shiu, M.C. Yang, T.S. Yang, M.S. Wong, National Dong Hwa University, Taiwan, ROC |
| TF-WeP11 Influence of the Microstructure on the Sputter-etching Characteristics of Pulsed-laser Deposited Strontium-titanate-oxide Thin Films L. Stafford, Universite de Montreal, Canada, M. Gaidi, INRS-Energie, Canada, O. Langlois, Universite de Montreal, Canada, M. Chaker, INRS-Energie, Canada, J. Margot, Universite de Montreal, Canada, M. Kulishov, Adtek Photomask Inc., Canada |
| TF-WeP12 Ferroelectric Properties of Highly Oriented BLT Films for Ferroelectric-gate Field-effect Transistors J.M. Lee, C.I. Kim, K.T. Kim, Chungang University, Korea |
| TF-WeP13 The Ferroelectric Properties of Lanthanide-doped Pb(Zr, Ti)O@sub 3@ Thin Films Prepared by using a Sol-gel Method C.I. Kim, Y.H. Son, K.T. Kim, Chung-Ang University, Korea |
| TF-WeP14 Amorphous Transparent Conductive Oxide Films of In@sub 2@O@sub 3@-ZnO with Additional Al@sub 2@O@sub 3@ Impurities K. Tominaga, H. Fukumoto, Y. Hayashi, K. Murai, T. Moriga, I. Nakabayashi, Tokushima University, Japan |
| TF-WeP15 Luminescence Behavior of Li-doped Gd@sub 2@O@sub 3@ : Eu@super 3+@ Thin Film Phosphors Grown by Pulsed Laser Ablation S.S. Yi, Silla University, Korea, J.S. Bae, H.J. Seo, B.K. Moon, J.H. Jeong, Pukyong National University, Korea, P.H. Holloway, University of Florida |
| TF-WeP16 Luminescent Characteristics of Se-doped ZnGa@sub 2@O@sub 4@:Mn Thin Film Phosphors Grown by Pulsed Laser Ablation J.H. Jeong, J.S. Bae, Pukyong National University, Korea, I.W. Kim, University of Ulsan, Korea, J.S. Lee, KyungSung University, Korea, S.S. Yi, Silla University, Korea, P.H. Holloway, University of Florida |
| TF-WeP17 Low-Resistivity Polycrystalline ZnO:Al Thin Films Prepared by Pulsed Laser Deposition T. Minami, H. Tanaka, K. Ihara, T. Miyata, Kanazawa Institute of Technology, Japan |
| TF-WeP18 Deposition of ITO Film using the DLC Buffer Layer between Plastic Substrate and ITO Layer M.G. Kim, H.S. Jeong, Y.W. Seo, ITM Inc., Korea |
| TF-WeP19 Deposition of ZnO:Al Gradient Composite Films Using Dual Magnetron Sputtering H.S. Jeong, H.J. Lee, M.S. Hwang, Y.W. Seo, ITM Inc., Korea, S.J. Kwon, Kyungwon University, Korea |
| TF-WeP20 ZnO Layers Grown by ns and subps Lasers in Nitrogen Atmosphere M. Jelinek, L. Soukup, Institute of Physics AS CR, Czech Republic, A. Klini, Foundation for Research and Technology - Hellas (FORTH), Greece, M. Cernanský, J. Oswald, Institute of Physics AS CR, Czech Republic, C. Fotakis, D. Anglos, Foundation for Research and Technology - Hellas (FORTH), Greece, R. Zeipl, Institute of Radio Engineering and Electronics AS CR, Czech Republic, A. Santoni, ENEA, Centro Ricerche Frascati, Italy |
| TF-WeP21 Orientation Selective Epitaxy of CeO@sub 2@(100) or CeO@sub 2@(110) Thin Films on Si(100) Substrates by Magnetron Sputtering with Substrate Bias T. Inoue, N. Sakamoto, M. Ohashi, A. Horikawa, S. Shida, Iwaki Meisei University, Japan, Y. Sampei, Fukushima Technology Centre, Japan |
| TF-WeP23 Analysis and Modeling of Low Pressure CVD of Phosphorus-doped Poly-silicon in Commercial Scale Reactor R. Shimizu, M. Ogino, Fuji Electric Corporate Research and Development, Ltd., Japan, M. Sugiyama, Y. Shimogaki, University of Tokyo, Japan |
| TF-WeP24 A Study of the Growth Front of Au Policristalline Films and its Relation with the Bulk Structure of the Films C. Munuera, J.A. Aznarez, E. Rodriguez, CSIC, Spain, A.I. Oliva, Centro de Investigaciones y Estudios Avanzados del IPN Unidad de Merida, Mexico, M.A. Aguilar, J.L. Sacedon, CSIC, Spain |
| TF-WeP26 Structure and Properties of Nanolaminate Chromium/ Titanium Oxide Films by Pulsed-DC Reactive Sputtering M.S. Wong, M.C. Yang, H.B. Chou, National Dong Hwa University, Taiwan, ROC, M.E. Graham, Northwestern University |
| TF-WeP27 Absorption Properties of Thin Film Getter for Impurity Gas in High Vacuum Environment K.C. Kim, Y.J. Yoon, Yonsei University, Korea, S.M. Lee, Kangwon National University, Korea, H.K. Baik, Yonsei University, korea |
| TF-WeP28 Control of Crystalline Evolution in Aluminum Nitride Thin Films Deposited by Magnetron Sputtering V.M. Pantojas, E. García, N.R. Ramos, W. Otaño, University of Puerto Rico at Cayey |
| TF-WeP29 Synthesis and Electrochemical Characteristics of Boron Carbon Nitride Films Deposited by Magnetron Sputtering E. Byon, Korea Institute of Machinery and Materials, M. Son, Samgsung Techwin Co. Ltd, Korea, N. Hara, K. Sugomoto, Tohoku University, Japan, S.-K. Kwon, Korea Institute of Machinery and Materials |
| TF-WeP30 Mechanical Properties of Ultranano-, Nano- and Poly-crystalline Diamond Films and Membranes A. Moon, T.A. Grotjohn, Michigan State University and Fraunhofer Center for Coatings and Laser Applications, M.K. Yaran, T. Schuelke, Fraunhofer Center for Coatings and Laser Applications, D.K. Reinhard, J. Asmussen, Michigan State University and Fraunhofer Center for Coatings and Laser Applications |
| TF-WeP31 Improvement of Corrosion Resistance of Transparent Conductive Multi-layer Coatings Consisting of Silver Layers and Transparent Metal Oxide Layers K. Koike, F. Yamazaki, T. Okamura, S. Fukuda, Mitsui Chemicals, Inc., Japan |
| TF-WeP32 Anisotropic Film Growth during PVD on Substrates in Planetary Motion G.C.A.M. Janssen, Delft University, The Netherlands, J.-D. Kamminga, NIMR, The Netherlands, P.F.A Alkemade, Delft University, The Netherlands, S.Yu. Grachev, NIMR, The Netherlands |
| TF-WeP33 Combined RF Magnetron Sputtering and Ion Implantation for the Synthesis of Silicon Carbonitride Thin Films M. Bruns, H. Lutz, Forschungszentrum Karlsruhe GmbH, Germany, M. Rudolphi, H. Baumann, Universitaet Frankfurt, Germany |