AVS 50th International Symposium
    Thin Films Wednesday Sessions
       Session TF-WeP

Paper TF-WeP32
Anisotropic Film Growth during PVD on Substrates in Planetary Motion

Wednesday, November 5, 2003, 11:00 am, Room Hall A-C

Session: Poster Session
Presenter: J.-D. Kamminga, NIMR, The Netherlands
Authors: G.C.A.M. Janssen, Delft University, The Netherlands
J.-D. Kamminga, NIMR, The Netherlands
P.F.A Alkemade, Delft University, The Netherlands
S.Yu. Grachev, NIMR, The Netherlands
Correspondent: Click to Email
Chromium films were deposited in an industrial PVD machine, designed to coat 3-D objects. The machine is equipped with a substrate table that allows a planetary motion of the substrates in front of the target. Films with thickness ranging from 30 nm to 10 µm were deposited on Si wafers. All films are under tensile stress. The thinner films exhibit a 110 fiber texture. The curvature of the substrates with the thinner films is radially symmetric. Therefore the stress is radially symmetric. The thicker films exhibit an in plane "single crystal" type texture. For these films the stress is no longer radially symmetric. The curvature of the wafers with the thicker films is distinctly different in the plane of planetary motion and perpendicular to that plane. A SEM top view of the thicker films shows an anisotropy in grain shape. We discuss the coinciding occurrence of anisotropy in stress and microstructure.