AVS 50th International Symposium
    Thin Films Wednesday Sessions
       Session TF-WeP

Paper TF-WeP4
The Effect of Temperature on the Materials Properties of Low k Films Deposited from Organosilicon Precursors

Wednesday, November 5, 2003, 11:00 am, Room Hall A-C

Session: Poster Session
Presenter: M.L. O'Neill, Air Products and Chemicals, Inc.
Authors: M.L. O'Neill, Air Products and Chemicals, Inc.
A.S. Lukas, Air Products and Chemicals, Inc.
R.N. Vrtis, Air Products and Chemicals, Inc.
J.L. Vincent, Air Products and Chemicals, Inc.
E.J. Karwacki, Air Products and Chemicals, Inc.
B.K. Peterson, Air Products and Chemicals, Inc.
M.D. Bitner, Air Products and Chemicals, Inc.
Correspondent: Click to Email
Organosilicate glass (OSG) materials are the leading interlayer dielectric (ILD) candidates for current and future technology nodes for integrated circuit manufacture. Current leading edge ILD films are deposited by plasma enhanced chemical vapor deposition (PECVD) with dielectric constants (k) in the range of 2.7-3.2. Future generation ILDs with k < 2.6 require the introduction of porosity. However integration issues caused by the reduced mechanical strength of these materials have delayed their introduction into manufacturing. Although there are numerous ways in which to introduce porosity to a material, the common goal for the processing of these materials is the means to optimize the networking forming process. Herein we examine the effect of temperature on material properties for films produced by PECVD from various OSG precursors. Recently developed codeposition methods use plasma polymerizable organic materials to template porosity in an OSG network during the deposition process. The process requires lower temperature depositions (150-300 °C) to deposit a discrete porogen phase along with the OSG network. Reduced deposition temperatures further compromise material mechanical strength by increasing the number of non-network forming groups in the film. A detailed comparison of film structure and properties with deposition temperature is used to identify the critical components of the precursor in providing the optimal OSG network. Balance between electrical and mechanical properties will provide the maximum opportunity for extension to future generation porous OSG dielectric materials.