AVS 50th International Symposium
    Thin Films Wednesday Sessions
       Session TF-WeP

Paper TF-WeP1
A Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect

Wednesday, November 5, 2003, 11:00 am, Room Hall A-C

Session: Poster Session
Presenter: H.S. Sim, Korea Institute of Science and Technology
Authors: H.S. Sim, Korea Institute of Science and Technology
S.I. Kim, Korea Institute of Science and Technology
H. Jeon, Hanyang University, Korea
Y.T. Kim, Korea Institute of Science and Technology
Correspondent: Click to Email
Tungsten nitride (W-N) was grown on tetraethylorthosilicate (TEOS) by pulse plasma enhanced atomic layer deposition (PPALD) from WF@sub 6@ and NH@sub 3@. It has been very difficult to deposit W-N film on the SiO@sub 2@ surface with ALD method by using WF@sub 6@ and NH@sub 3@ because WF@sub 6@ does not adsorb on the SiO@sub 2@ surface. In this work, however introducing NH@sub 3@ pulse plasma, which modify the SiO@sub 2@ surface to nitride surface, we can deposit the W-N film on the SiO@sub 2@ surface with the growth rate of ~1.3 monolayer/cycle at 350°C. N concentration is also uniformly distributed in the W-N film. This is due to the surface nitridation to enable the adsorption of WF@sub 6@ at the SiO@sub 2@ surface. As a diffusion barrier for the Cu interconnect, electrical measurement reveals that 22 nm thick W-N successfully prevents Cu diffusion after the annealing at 600°C for 30 min.