AVS 50th International Symposium
    Thin Films Wednesday Sessions
       Session TF-WeP

Paper TF-WeP13
The Ferroelectric Properties of Lanthanide-doped Pb(Zr, Ti)O@sub 3@ Thin Films Prepared by using a Sol-gel Method

Wednesday, November 5, 2003, 11:00 am, Room Hall A-C

Session: Poster Session
Presenter: Y.H. Son, Chung-Ang University, Korea
Authors: C.I. Kim, Chung-Ang University, Korea
Y.H. Son, Chung-Ang University, Korea
K.T. Kim, Chung-Ang University, Korea
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The PZT film has a large polarization and a low crystallization temperature. However, there are some problems in the PZT film, such as fatigue with Pt electrodes and poor retention. In this study, lanthanide (Eu, Dy, Tb, Er)-doped lead zirconium titanate(PZT) thin films on the Pt/Ti/SiO@sub 2@/Si substrates prepared by a sol-gel method. According to the ionic radius, lanthanide (Ln) tends to occupy the A-site of PZT perovskite structure and acts as a donor that generates Pb vacancies. Ln doping was found to alter significantly the dielectric and ferroelectric properties. We investigated the effect on the structural and electrical properties of PZT films as a function of Ln concentrations. The structure and the morphology of PZT films were analyzed by x-ray diffraction (XRD), atomic force microscope (AFM), and scanning electron micrograph (SEM). The depth profile of the interfaces between PZT films and electrode materials were examined using Auger electron spectroscope (AES). SEM and AFM showed uniform surface of PZT films. The dielectric constant and the dielectric loss of Ln-doped PZT thin films decreased with the increasing Ln content. Ln-doped PZT thin films showed improved fatigue characteristic comparing to the undoped PZT thin film.