AVS 50th International Symposium
    Thin Films Wednesday Sessions
       Session TF-WeP

Paper TF-WeP27
Absorption Properties of Thin Film Getter for Impurity Gas in High Vacuum Environment

Wednesday, November 5, 2003, 11:00 am, Room Hall A-C

Session: Poster Session
Presenter: K.C. Kim, Yonsei University, Korea
Authors: K.C. Kim, Yonsei University, Korea
Y.J. Yoon, Yonsei University, Korea
S.M. Lee, Kangwon National University, Korea
H.K. Baik, Yonsei University, korea
Correspondent: Click to Email
Recently, getters have been widely used in vacuum microelectronics requiring high vacuum. The conventional bulk getters required high temperature activation processes for proper action as a getter, where the device was contaminated by outgassing of different gases, e.g., H@sub 2@O, O@sub 2@, H@sub 2@O, CO, CO@sub 2@. The conventional bulk getter itself was not suitable for the microelectronic devices due to size limitations. As a resolution to such problems, thin film getters, small enough for microelectronic applications, with excellent resonant gas absorption characteristic and requiring no activation, have been fabricated and analyzed. In this research, Zr was used as a getter material, and Ni and Pt were used for catalysis and protection of the getter against oxidation. Thin film getters were fabricated by the introduction of Pt and Ni layers, which exhibited excellent absorption characteristic of impurity gases in high vacuum, without high temperature activation. Realization of thin film getters, by solution of the size limitations of the bulk getters, enabled getter to apply to the microelectronic devices.