AVS 50th International Symposium
    Thin Films Wednesday Sessions
       Session TF-WeP

Paper TF-WeP21
Orientation Selective Epitaxy of CeO@sub 2@(100) or CeO@sub 2@(110) Thin Films on Si(100) Substrates by Magnetron Sputtering with Substrate Bias

Wednesday, November 5, 2003, 11:00 am, Room Hall A-C

Session: Poster Session
Presenter: T. Inoue, Iwaki Meisei University, Japan
Authors: T. Inoue, Iwaki Meisei University, Japan
N. Sakamoto, Iwaki Meisei University, Japan
M. Ohashi, Iwaki Meisei University, Japan
A. Horikawa, Iwaki Meisei University, Japan
S. Shida, Iwaki Meisei University, Japan
Y. Sampei, Fukushima Technology Centre, Japan
Correspondent: Click to Email
From studies on the epitaxial growth of CeO@sub 2@ layers on Si(100) substrates using reactive dc magnetron sputtering enhanced with an inductively coupled rf plasma, it is found that the epitaxial CeO@sub 2@ layer with (100) or (110) orientation is selectively grown by controlling substrate bias and plasma power. Although many reports have been made on the growth of CeO@sub 2@(110)/Si(100), recently CeO@sub 2@(100) layers have been reported to grow on atomically cleaned Si(100) surfaces with a 2x1 reconstructed structure in an ultra-high vacuum. Our method has superiority in the requirement of only practical H-terminated surfaces obtained by the usual wet cleaning process. Adopting two step growth method; ultrathin metallic Ce layer deposition at room temperature followed by silicidation process at several hundreds degree C, and subsequent reactive sputtering in an Ar/O@sub 2@ mixture environment using Ce metal target at elevated temperature, the CeO@sub 2@(100) layer epitaxy is attained applying either positive or negative substrate bias of 15 - 20 V, whereas CeO@sub 2@(110) layers are grown without substrate bias. The orientation selection is found to be also dependent on plasma power, in other words the growth rate: the low growth rate leads to (100) orientation and vice versa. This orientation selective epitaxial growth technique will be useful for device applications. Details on the growth parameters of both substrate bias and plasma power and the characterization including RHEED, XRD, XTEM and AFM will be presented.