AVS 50th International Symposium
    Thin Films Wednesday Sessions
       Session TF-WeP

Paper TF-WeP2
Atomic Layer Deposition of Iron Oxide Thin Films

Wednesday, November 5, 2003, 11:00 am, Room Hall A-C

Session: Poster Session
Presenter: L.A. Falco, University of Alabama
Authors: T.M. Klein, University of Alabama
L.A. Falco, University of Alabama
Correspondent: Click to Email
Atomic layer deposition (ALD) has been successfully used in various thin film applications such as electroluminescent (TFEL) flat panel displays, electrochemical solar cells, gas sensors, optical coatings, and microelectronics materials. Thin epitaxial films for super lattices and quantum wells have also been demonstrated by ALD. A wide variety of metal oxide materials have been investigated, however, Fe@sub 2@O@sub 3@ has not been studied extensively. In this poster, we will present the properties of atomic layer deposited hematite (Fe@sub 2@O@sub 3@) thin films on MgO and Al@sub 2@O@sub 3@ substrates using iron (III) acetylacetonate, a solid which sublimes at 110 °C and 2 torr. Iron oxide films may be useful on solid oxide membranes to modify surface selectivity in fuel cell applications.