AVS 50th International Symposium
    Thin Films Wednesday Sessions
       Session TF-WeP

Paper TF-WeP16
Luminescent Characteristics of Se-doped ZnGa@sub 2@O@sub 4@:Mn Thin Film Phosphors Grown by Pulsed Laser Ablation

Wednesday, November 5, 2003, 11:00 am, Room Hall A-C

Session: Poster Session
Presenter: J.H. Jeong, Pukyong National University, Korea
Authors: J.H. Jeong, Pukyong National University, Korea
J.S. Bae, Pukyong National University, Korea
I.W. Kim, University of Ulsan, Korea
J.S. Lee, KyungSung University, Korea
S.S. Yi, Silla University, Korea
P.H. Holloway, University of Florida
Correspondent: Click to Email
Mn-doped ZnGa@sub 2@O@sub 4-x@Se@sub x@ thin film phosphors have been grown using pulsed laser ablation(PLA) under various growth conditions. The structural characterization was carried out on a series of ZnGa@sub 2@O@sub 4-x@Se@sub x@ : Mn@super 2+@ films grown on MgO(100) substrates using Zn-rich ceramic targets. Zn-rich ceramic targets have been prepared to compensate for the vaporization loss of Zn during PLA. The oxygen pressure was fixed at 100 mTorr and substrate temperatures were varied from 500 to 700 °C. The luminescence results indicated that MgO (100) is a promising substrate for the growth of high-quality of ZnGa@sub 2@O@sub 4-x@Se@sub x@ : Mn@super 2+@ films. The crystallinity and surface roughness of the ZnGa@sub 2@O@sub 4-x@Se@sub x@ : Mn films are highly dependent on the growth conditions, in particular the substrate temperature and the composition ratio of targets. Epitaxial films were obtained on MgO (100) substrates due to the low lattice mismatch between ZnGa@sub 2@O@sub 4@ and MgO. The crystallinity of the films is improved with Se doping. The root mean square surface roughness of these ZnGa@sub 2@O@sub 4-x@Se@sub x@ : Mn@super 2+@ films were found to initially increase from 3.25 nm (x=0.00) to 10.92 nm (x=0.075) then decrease to 8.43 nm (x=0.10) as the amount of Se increases. Incorporation of Se into the ZnGa2O4 lattice led to a remarkable increase of photoluminescence. The highest green emission intensity was observed with ZnGa@sub 2@O@sub 3.925@Se@sub 0.075@ : Mn@super 2+@ films whose brightness was increased by a factor of 3.1 in comparison with that of ZnGa@sub 2@O@sub 4@ : Mn@super 2+@ films. This phosphor is promising for application in flat panel displays.