AVS 50th International Symposium
    Thin Films Wednesday Sessions
       Session TF-WeP

Paper TF-WeP20
ZnO Layers Grown by ns and subps Lasers in Nitrogen Atmosphere

Wednesday, November 5, 2003, 11:00 am, Room Hall A-C

Session: Poster Session
Presenter: M. Jelinek, Institute of Physics AS CR, Czech Republic
Authors: M. Jelinek, Institute of Physics AS CR, Czech Republic
L. Soukup, Institute of Physics AS CR, Czech Republic
A. Klini, Foundation for Research and Technology - Hellas (FORTH), Greece
M. Cernanský, Institute of Physics AS CR, Czech Republic
J. Oswald, Institute of Physics AS CR, Czech Republic
C. Fotakis, Foundation for Research and Technology - Hellas (FORTH), Greece
D. Anglos, Foundation for Research and Technology - Hellas (FORTH), Greece
R. Zeipl, Institute of Radio Engineering and Electronics AS CR, Czech Republic
A. Santoni, ENEA, Centro Ricerche Frascati, Italy
Correspondent: Click to Email
Thin ZnO films and nitrogen doped ZnO films were grown by subpicosecond (450 fs) and nanosecond (20 ns) KrF pulsed laser deposition (PLD) and by PLD combined with radiofrequency (RF) discharge. Discharge (13.56 MHz) was situated between two RF electrodes placed parallel to plazma plume. Doped ZnO layers were fabricated in mixture of nitrogen and oxygen, for various T@sub s@ and RF power. As substrate fused silica was used. Films were transparent from ~ 350 nm. Highly oriented peaks with FMWH (2? 0.15o was detected by XRD. Films grown in RF discharges were nanocrystalline with crystallites size of 10nm. Hall constant, Hall mobility and resistivity were measured by Van der Pauv method. In dependence on deposition conditions the Hall constant in the range of 1 x 10@super -7@ 2 x 10@super -3@ m@super 3@/As, mobility from 6 x 10@super -2@ to 18.2 cm@super 2@/Vs and resistivity 5.9 x 10@super -5@ to 20 @OMEGA@m were obtained. XPS and WDX results and experimental details will be also presented. @FootnoteText@ The authors thank to the Czech Grant Agency for financial support under contract S1010203.