AVS 50th International Symposium
    Thin Films Wednesday Sessions
       Session TF-WeP

Paper TF-WeP15
Luminescence Behavior of Li-doped Gd@sub 2@O@sub 3@ : Eu@super 3+@ Thin Film Phosphors Grown by Pulsed Laser Ablation

Wednesday, November 5, 2003, 11:00 am, Room Hall A-C

Session: Poster Session
Presenter: S.S. Yi, Silla University, Korea
Authors: S.S. Yi, Silla University, Korea
J.S. Bae, Pukyong National University, Korea
H.J. Seo, Pukyong National University, Korea
B.K. Moon, Pukyong National University, Korea
J.H. Jeong, Pukyong National University, Korea
P.H. Holloway, University of Florida
Correspondent: Click to Email
Gd@sub 2@O@sub 3@ : Eu@super 3+@ and Li-doped Gd@sub 2@O@sub 3@ : Eu@super 3+@ luminescent thin films have been grown on Al@sub 2@O@sub 3@ (0001) substrates at substrate temperatures in the range of 500 ~ 700 °C and oxygen pressure in the range of 100 ~ 300 mTorr using a pulsed laser deposition technique. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The photoluminescence brightness data obtained from Li-doped Gd@sub 2@O@sub 3@ : Eu@super 3+@ films grown under optimized conditions have indicated that sapphire is a good substrate for the growth of high quality Li-doped Gd@sub 2@O@sub 3@ : Eu@super 3+@ thin film red phosphor. The luminescence of the Gd@sub 2@O@sub 3@ : Eu@super 3+@ films is highly dependent on the crystallinity and surface roughness of the films. In particular, incorporation of Li@super +@ ions into the Gd@sub 2@O@sub 3@ lattice induces a remarkablely enhanced crystallinity and photoluminescence. The diffraction data suggest that the (222) surface is preferentially oriented parallel to the substrate for films grown on Al@sub 2@O@sub 3@ (0001). In addition, the full width at half maximum (FWHM) of the diffraction peaks is narrower (~20 %) for films grown with versus films grown without Li-doping. The root mean square roughness of these films was found to vary from 7.5 to 16.1 nm depending upon the Li-doping. The highest emission intensity was observed with LiF-doped Gd@sub 1.84@Li@sub 0.08@Eu@sub 0.08@O@sub 3@, whose brightness was increased by a factor of 2.3 in comparison with that of Gd@sub 2@O@sub 3@ : Eu@super 3+@ films. This phosphor is promising for the flat panel displays.