| AVS 47th International Symposium | |
| Semiconductors | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| SC+EL+SS-WeP1 Selectivity in Attachment of a Model pi-conjugated Organic Molecule to a Group IV Semiconductor Surface: Styrene on Si(001) M.P. Schwartz, University of Wisconsin, Madison, M.D. Ellison, Wittenberg University, S.K. Coulter, R.J. Hamers, University of Wisconsin, Madison |
| SC+EL+SS-WeP2 Ferrocene and Decamethylferrocene Adsorption and Decomposition on Ag(100) and Si(111) C.M. Woodbridge, D.L. Pugmire, University of Nebraska, Lincoln, N.M. Boag, University of Salford, M.A. Langell, University of Nebraska, Lincoln |
| SC+EL+SS-WeP3 Lowering of Processing Temperature due to a High Pressure Deuterium Anneal for Improved CMOS Hot Carrier Reliability J. Lee, K. Cheng, K. Hess, J.W. Lyding, University of Illinois, Urbana, Y.K. Kim, Y.W. Kim, K.P. Suh, Samsung Electronics Co., Ltd. |
| SC+EL+SS-WeP4 Investigation of the Penetration of Atomic Hydrogen from the Gas Phase into a SiO@sub 2@/GaAs System V.A. Kagadei, Research Institute of Semiconductor Devices, Russia, E.V. Nefedtsev, Tomsk University of Control Systems and Radioelectronics, Russia, D.I. Proskurovsky, Institute of High Current Electronics, Russia |
| SC+EL+SS-WeP5 a-SiC:H Thin Films Fabricated by the High Rate Deposition Method B.G. Budaguan, A.A. Sherchenkov, Moscow Institute of Electronic Technology, Russia, A.A. Berdnikov, V.D. Chernomordic, Institute of Microelectronics of Russian Academy of Science, A.A. Aivazov, UniSil Corp. |
| SC+EL+SS-WeP6 Mechanism for and Site of the Dissociative Chemisorption of XeF@sub 2@ on Si(100)2x1 Below 1 ML of Fluorine Coverage J.R. Holt, R.C. Hefty, M.R. Tate, S.T. Ceyer, Massachusetts Institute of Technology |
| SC+EL+SS-WeP7 STM Investigations of the Initial Ad- and Desorption Sites of Molecular Hydrogen on Si(001) M. Dürr, Philipps University Marburg, Germany, A. Biedermann, Z. Hu, Columbia University, U. Höfer, Philipps University Marburg, Germany, T.F. Heinz, Columbia University |
| SC+EL+SS-WeP8 Photoemission Study on Initial Oxidation of Si(001) Surfaces with Supersonic O@sub 2@ Molecular Beams Y. Teraoka, A. Yoshigoe, Japan Atomic Energy Research Institute |
| SC+EL+SS-WeP9 The Effect of Time and Moisture on the Adhesion Bond between Silica Particle and Silicon Oxide Substrate J.W. Feng, A.A. Busnaina, Clarkson University |
| SC+EL+SS-WeP10 Influence of Growth Direction on Order-Disorder Transition in (GaAs)@sub (1-x)@(Ge)@sub 2x@ Semiconductors A.G. Rodriguez, H. Navarro-Contreras, M.A. Vidal, University, Mexico |
| SC+EL+SS-WeP11 Surface Electronic Structure of p-type GaN(000-1) P. Ryan, Y.C. Chao, K.E. Smith, Boston University |
| SC+EL+SS-WeP12 Ultrafast Dephasing of Coherent Phonons by Lattice Defects in n-GaAs M. Kitajima, M. Hase, K. Ishioka, National Research Institute for Metals, Japan, K. Ushida, RIKEN, Japan |
| SC+EL+SS-WeP13 High Density Plasma Via Hole Etching In SiC H. Cho, Miryang National University, South Korea, K.P. Lee, P. Leerungnawarat, University of Florida, S.N.G. Chu, Lucent Technologies, Bell Laboratories, F. Ren, University of Florida, C.-M. Zetterling, Royal Institute of Technology (KTH), Sweden, S.J. Pearton, University of Florida |
| SC+EL+SS-WeP14 RHEED Study of Ion-beam Induced Carbonization for 3C-SiC Heteroepitaxial Growth on Si(100) N. Tsubouchi, A. Chayahara, A. Kinomura, Y. Horino, Osaka National Research Institute, Japan |
| SC+EL+SS-WeP15 Auger Depth Profile Analysis: Process Window Definition of 0.2 micron Aluminum RIE Interconnections C. Dziobkowski, L. Clevenger, IBM Corporation, M. Honda, Toshiba, Japan, R. Ramachandran, Infineon Technologies |
| SC+EL+SS-WeP16 Epitaxial Growth of Cubic SiC Thin Films on Silicon Using New Single Molecular Precursors by MOCVD J.-H. Boo, S.-B. Lee, Sungkyunkwan University, Korea, K.-W. Lee, Yunsoo Kim, K.-S. Yu, S.H. Yeon, I.N. Jung, Korea Research Institute of Chemical Technology |
| SC+EL+SS-WeP17 Optical and Contact Properties of Indium Tin Oxide on p-GaN D.W. Kim, Y.J. Sung, J.W. Bae, G.Y. Yeom, Sungkyunkwan University, Korea, H.S. Kim, University of Strathclyde, Scotland |
| SC+EL+SS-WeP18 Visible Emission from Electroluminescent Devices using an Amorphous AlN:Cu, Mn, and Cr Thin Film Phosphor M.L. Caldwell, V.I. Dimitrova, M.E. Kordesch, H.H. Richardson, P.G. Van Patten, Ohio University |
| SC+EL+SS-WeP19 Organic Contamination Removal on Silicon Substrate by Low Temperature Remote Plasma H. Kang, H. Soh, H. Seo, Y.C. Kim, H. Jeon, Hanyang University, Korea |
| SC+EL+SS-WeP20 Studies of the Surface Morphology, Chemical and Structural Changes of Ion Bombarded Silicon Carbide P. McCarty, University of Alabama, Huntsville, C.I. Muntele, I. Muntele, Alabama A&M University, M.A. George, University of Alabama, Huntsville, D. Ila, Alabama A&M University, D.B. Poker, D.K. Hensley, Oak Ridge National Laboratory |
| SC+EL+SS-WeP21 Gallium Oxide Deposition and Radical Oxidation on GaAs(001)-(2x4) Investigated with STM S.I. Yi, P. Kruse, M. Hale, A.C. Kummel, University of California, San Diego |
| SC+EL+SS-WeP22 Density Functional Theory Studies of Semiconductor Surfaces G.S. Hwang, California Institute of Technology, C.B. Shin, Ajou University, South Korea |
| SC+EL+SS-WeP23 Investigation of Polycrystalline Silicon Grain Structure by Single Wafer Rapid Thermal Chemical Vapor Deposition (RTCVD) H. Bu, C. Hu, M. Bevan, L. Tsung, Texas Instruments, L. Luo, Applied Materials |
| SC+EL+SS-WeP24 Buried Low-Temperature (T@sub s@ <500 °C) Lateral Epitaxial Overgrowth of Si on SiO@sub 2@ Using Solid-Metal-Mediated Epitaxy T. LaFave Jr., N. Lakshminarayana, A. Faik, M.-A. Hasan, University of North Carolina |
| SC+EL+SS-WeP25 Field-Assisted Metal-Induced Crystallization of Amorphous Silicon Films A. Khakifirooz, S.S. Mohajerzadeh, S. Haji, University of Tehran, Iran |
| SC+EL+SS-WeP26 Medium Range Order in Amorphous Silicon Films as a Function of Low-Energy Particle Bombardment During Growth J.E. Gerbi, J.R. Abelson, University of Illinois at Urbana-Champaign, P.M. Voyles, University of Illinois and NEC Research Institute, M.M.J. Treacy, NEC Research Institute, J.M. Gibson, Argonne National Laboratory |
| SC+EL+SS-WeP27 Cluster Deposition Study by Molecular Dynamics Simulation: Al Cluster and Cu Cluster J.-W. Kang, K.-S. Choi, E.-S. Kang, K.-R. Byun, H.-J. Hwang, Chung-Ang University, Korea |