AVS 47th International Symposium
    Semiconductors Wednesday Sessions
       Session SC+EL+SS-WeP

Paper SC+EL+SS-WeP19
Organic Contamination Removal on Silicon Substrate by Low Temperature Remote Plasma

Wednesday, October 4, 2000, 11:00 am, Room Exhibit Hall C & D

Session: Poster Session
Presenter: H. Kang, Hanyang University, Korea
Authors: H. Kang, Hanyang University, Korea
H. Soh, Hanyang University, Korea
H. Seo, Hanyang University, Korea
Y.C. Kim, Hanyang University, Korea
H. Jeon, Hanyang University, Korea
Correspondent: Click to Email
Organic contamination on silicon substrate deteriorates the film adhesion and forms deleterious decomposition during heating process. Organic impurities absorbed on the Si substrate surface generally desorbes in the form of volatile compounds by radio frequency (RF) remote oxygen and hydrogen plasma at relatively low temperatures. In this study, organic contamination removal and Si substrate surface microroughness by RF remote oxygen and hydrogen plasma will be described. The remote plasma system and analysis systems were connected by ultrahigh vacuum transfer system to avoid recontamination such as carbon absorption in the air. Organic impurity were intentionally contaminated and removed by hydrogen and oxygen remote plasma system. Surface contamination concentration and bonding state changes were analyzed by Auger electron spectroscopy (AES) and x-ray photoelectron spectroscopy (XPS). Surface morphology and microroughness were observed by scanning tunneling microscope (STM) and atomic force microscope (AFM). After remote hydrogen and oxygen plasma cleaning, carbon impurity was significantly reduced below detection limit of AES and the Si-C peaks of XPS were not observed. The surface microroughness generally degraded with increasing plasma power and exposure time.