AVS 47th International Symposium
    Semiconductors Wednesday Sessions
       Session SC+EL+SS-WeP

Paper SC+EL+SS-WeP14
RHEED Study of Ion-beam Induced Carbonization for 3C-SiC Heteroepitaxial Growth on Si(100)

Wednesday, October 4, 2000, 11:00 am, Room Exhibit Hall C & D

Session: Poster Session
Presenter: N. Tsubouchi, Osaka National Research Institute, Japan
Authors: N. Tsubouchi, Osaka National Research Institute, Japan
A. Chayahara, Osaka National Research Institute, Japan
A. Kinomura, Osaka National Research Institute, Japan
Y. Horino, Osaka National Research Institute, Japan
Correspondent: Click to Email
3C-SiC heteroepitaxial film formation on a Si substrate is a very important when we consider compatibility with the silicon fabrication technology. So far, it has been reported that a carbonization process as buffer layer formation using various film-growth methods is effective for the heteroepitaxial film growth of 3C-SiC on Si while the lattice mismatch between 3C-SiC and Si is as large as 20 %. These methods reported for this reaction process, however, require high-temperatures ranging 700--1000°C, causing serious problems of redistribution of dopants and crystal defects such as dislocations and stacking faults especially at the heterointerface. In addition, carbonization reaction between provided gases including carbon atoms and Si substrates also results in promotion of defect formation in the Si-SiC interface. For solving these problems, a newly process, that is, ion-beam induced carbonization process of Si(100) with mass-separated energetic carbon ion species (e.g., @super 12@C@super -@, @super 12@C@sub 2@@super -@, @super 12@C@super +@ ions) was tried and investigated by RHEED measurements. The kinetic energies of ions and substrate temperatures were in the range 20-1200 eV and 400-700 °C, respectively. Such energetic species have possibility to lower a growth temperature inducing a decrease in defects and dislocations at the SiC/Si interface, in comparison with conventional methods. We report on the SiC growth condition during the carbonization process, i.e., ion-beam energy and substrate temperature dependence together with structural information.