AVS 47th International Symposium
    Semiconductors Wednesday Sessions
       Session SC+EL+SS-WeP

Paper SC+EL+SS-WeP9
The Effect of Time and Moisture on the Adhesion Bond between Silica Particle and Silicon Oxide Substrate

Wednesday, October 4, 2000, 11:00 am, Room Exhibit Hall C & D

Session: Poster Session
Presenter: J.W. Feng, Clarkson University
Authors: J.W. Feng, Clarkson University
A.A. Busnaina, Clarkson University
Correspondent: Click to Email
Adhesion of silica particles to silicon wafers is a problem that affects semiconductor manufacturing processes. The particle adhesion forces are greatly affected by the environment such as humidity, temperature and adhesion induced stress between the particle and the wafer following the particle deposition. The adhesion forces considered in the process include van der Waals, capillary force, double layer force and hydrogen bonding. In this study, silica particles are deposited onto wet and dry thermal oxide silicon wafers, then the samples are aged in different relative humidity environments. Results show that the largest increase in contact area between silica particles and thermal oxide wafers occur when the particle is first deposited on wet surface then aged in relative humidity above 55%. Higher humidity, results in higher adhesion force and lower removal efficiency. Results also indicate that adhesion force increases by more than two order of magnitude after the aging process. This suggests that hydrogen and covalent bonds are responsible for the increase in the adhesion force especially in humid environments.