AVS 47th International Symposium
    Semiconductors Wednesday Sessions
       Session SC+EL+SS-WeP

Paper SC+EL+SS-WeP21
Gallium Oxide Deposition and Radical Oxidation on GaAs(001)-(2x4) Investigated with STM

Wednesday, October 4, 2000, 11:00 am, Room Exhibit Hall C & D

Session: Poster Session
Presenter: S.I. Yi, University of California, San Diego
Authors: S.I. Yi, University of California, San Diego
P. Kruse, University of California, San Diego
M. Hale, University of California, San Diego
A.C. Kummel, University of California, San Diego
Correspondent: Click to Email
Growth of metal oxide on GaAs with a low interface defect density is necessary for development of GaAs based metal oxide semiconductor field effect transistor (MOSFET). Vapor deposition of gallium oxide on GaAs(001) is emerging as a viable method for this objective. Using STM, we have investigated deposition of gallium oxide on GaAs(001)-(2x4) during the initial period and oxidation of the surface by atomic oxygen. Deposition of gallium oxide results in an atomically abrupt interface with the GaAs(001)-(2x4) surface, without disrupting the (2x4) surface order. In contrast, oxidation of GaAs(001)-(2x4) by atomic oxygen results in disordering of the surface characterized by formation of undimerized As surface atoms with half filled dangling bonds and As@subGa@ antisites. The stark difference in these two methods of oxide preparation has a profound implication for development of GaAs based MOSFET devices.