AVS 47th International Symposium
    Semiconductors Wednesday Sessions
       Session SC+EL+SS-WeP

Paper SC+EL+SS-WeP27
Cluster Deposition Study by Molecular Dynamics Simulation: Al Cluster and Cu Cluster

Wednesday, October 4, 2000, 11:00 am, Room Exhibit Hall C & D

Session: Poster Session
Presenter: J.-W. Kang, Chung-Ang University, Korea
Authors: J.-W. Kang, Chung-Ang University, Korea
K.-S. Choi, Chung-Ang University, Korea
E.-S. Kang, Chung-Ang University, Korea
K.-R. Byun, Chung-Ang University, Korea
H.-J. Hwang, Chung-Ang University, Korea
Correspondent: Click to Email
Ionized cluster beam deposition for semiconductor interconnection technology has attracted much attention as a promising method for growing high-quality films at low substrate temperature. Therefore, it is important to understand the interaction between energetic cluster and substrate. In this work, we investigated energetic copper and aluminum clusters deposition and cluster-surface interactions. In the work, we used copper and aluminum clusters with the face centered cubic structure, a classical molecular dynamics simulation, and the second-moment approximation of tight-binding scheme. We simulated cluster deposition and investigated the variations of substrate temperature and the number of disordered atom as a functions of time, energy, and cluster size. The maximum substrate temperatures after energetic cluster impact on surface had linear relationship with total cluster energy and energy per atom, but we could not find any specific relationship with time taken for substrate temperature to reach its maximum. In this work, the correlated collisions between atoms in the cluster played a very important role in the impact on substrate surface and the correlated collision effect was proportional to the cluster size and kinetic energy per atom. For each impact angle and energy, we calculated the average properties such as sputter yield, sticking probability, average reflection angle of the impact cluster, and average emission angle of the sputter products. The calculated properties were compared with that of single atom deposition.