AVS 47th International Symposium
    Semiconductors Wednesday Sessions
       Session SC+EL+SS-WeP

Paper SC+EL+SS-WeP16
Epitaxial Growth of Cubic SiC Thin Films on Silicon Using New Single Molecular Precursors by MOCVD

Wednesday, October 4, 2000, 11:00 am, Room Exhibit Hall C & D

Session: Poster Session
Presenter: J.-H. Boo, Sungkyunkwan University, Korea
Authors: J.-H. Boo, Sungkyunkwan University, Korea
S.-B. Lee, Sungkyunkwan University, Korea
K.-W. Lee, Korea Research Institute of Chemical Technology
Yunsoo Kim, Korea Research Institute of Chemical Technology
K.-S. Yu, Korea Research Institute of Chemical Technology
S.H. Yeon, Korea Research Institute of Chemical Technology
I.N. Jung, Korea Research Institute of Chemical Technology
Correspondent: Click to Email
Heteroepitaxial cubic SiC thin films have been deposited on silicon substrates at temperatures in the range of 750 - 1000 ° C using newly developed single molecular precursors by MOCVD method. Single-crystalline, crack-free stoichiometric cubic SiC films were successfully grown on both Si(001) and Si(111) substrates without surface carbonization at as low as temperature of 920 ° C with 1,3-disilabutane (DSB), H@sub 3@Si-CH@sub 2@-SiH@sub 2@-CH@sub 3@, as a liquid single source precursor which contains silicon and carbon in 1:1 ratio. Cubic SiC thin films highly oriented in the [001] direction were also obtained on Si(001) using either a liquid mixture of 1,3,5-trisilapentane (TSP), H@sub 3@Si-CH@sub 2@-SiH@sub 2@-CH@sub 2@-SiH@sub 3@, and 2,4,6-trisilaheptane (TSH) at 980 ° C or 2,6-dimethyl-2,4,6-trisilaheptane (DMTSH), H@sub 3@C-SiH(CH@sub 3@)-CH@sub 2@-SiH@sub 2@-CH@sub 2@-SiH(CH@sub 3@)-CH@sub 3@ at 950 ° C without carrier gas. These growth temperatures were much lower than conventional CVD growth temperatures, and this is the first report of cubic SiC film growth using the single molecular precursors of trisilaalkanes.