AVS 47th International Symposium
    Semiconductors Wednesday Sessions
       Session SC+EL+SS-WeP

Paper SC+EL+SS-WeP11
Surface Electronic Structure of p-type GaN(000-1)

Wednesday, October 4, 2000, 11:00 am, Room Exhibit Hall C & D

Session: Poster Session
Presenter: P. Ryan, Boston University
Authors: P. Ryan, Boston University
Y.C. Chao, Boston University
K.E. Smith, Boston University
Correspondent: Click to Email
Our investigation sought to describe the surface electronic characteristics of MBE grown (Mg-doped) wurtzite p-GaN (0001'). Four surface bands were mapped within the surface Brillouin zone. The peaks have been removed by atomic hydrogen exposure and three of the peaks show pz orbital configuration, the fourth an s orbital. The most interesting peak is a highly dispersing surface state which sweeps from the bulk valence band into the forbidden bulk band gap, approaches the Fermi level then returns to the bulk valence band. We compare this state to previously predicted mid-gap surface states.